KP11N60D Specs and Replacement
Type Designator: KP11N60D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 69.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: DPAK
KP11N60D substitution
- MOSFET ⓘ Cross-Reference Search
KP11N60D datasheet
kp11n60d.pdf
KP11N60D SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for active power factor C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 correction and swit... See More ⇒
kp11n60f.pdf
KP11N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppl... See More ⇒
Detailed specifications: KO3407 , KO3409 , KO3413 , KO3414 , KO3416 , KO3419 , KO3423 , KO8822 , 13N50 , KP11N60F , KP819AC , KP821A , KP821B , KP826AC , KP8M10 , KP8M3 , KP8M4 .
History: FRE460H
Keywords - KP11N60D MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
