All MOSFET. KP11N60D Datasheet

 

KP11N60D MOSFET. Datasheet pdf. Equivalent

Type Designator: KP11N60D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 69.4 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 800 pF

Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm

Package: DPAK

KP11N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KP11N60D Datasheet (PDF)

0.1. kp11n60d.pdf Size:380K _kec

KP11N60D KP11N60D

KP11N60D SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for active power factor C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 correction and swit

7.1. kp11n60f.pdf Size:382K _kec

KP11N60D KP11N60D

KP11N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppl

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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