KP11N60D MOSFET Datasheet: N-Ch, 600V, 11A. Full specification with pinout and replacement list

KP11N60D Specs and Replacement

   Type Designator: KP11N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: DPAK

KP11N60D substitution

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KP11N60D datasheet

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KP11N60D SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for active power factor C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 correction and swit... See More ⇒

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KP11N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppl... See More ⇒

Detailed specifications: KO3407 , KO3409 , KO3413 , KO3414 , KO3416 , KO3419 , KO3423 , KO8822 , 13N50 , KP11N60F , KP819AC , KP821A , KP821B , KP826AC , KP8M10 , KP8M3 , KP8M4 .