KP979B Datasheet and Replacement
Type Designator: KP979B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 206 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 190 pF
Package: KT-56
KP979B substitution
KP979B Datasheet (PDF)
kp979b.pdf

Syntez MicroelectronicsKP979BSILICON MOS N-CHANNEL POWER TRANSISTOR150 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 13 dB Min Output Power: 150 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value U
kp979a.pdf

Syntez MicroelectronicsKP979ASILICON MOS N-CHANNEL POWER TRANSISTOR60 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 14 dB Min Output Power: 60 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value Uni
kp979vc.pdf

Syntez MicroelectronicsKP979VCSILICON MOS N-CHANNEL POWER TRANSISTOR300 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 50 Vdc Power Gain: 14 dB Min Output Power: 300 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value
Datasheet: KP8N60F , KP8N65D , KP977AC , KP978A , KP978BC , KP978GC , KP978VC , KP979A , IRFZ46N , KP979VC , KP980A , KP981A , KP981BC , KP981VC , KPA1716 , KPA1750 , KPA1758 .
History: NTMFS5C430NLT3G | AOC3860A
Keywords - KP979B MOSFET datasheet
KP979B cross reference
KP979B equivalent finder
KP979B lookup
KP979B substitution
KP979B replacement
History: NTMFS5C430NLT3G | AOC3860A



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