KP979B Specs and Replacement
Type Designator: KP979B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 206 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 190 pF
Package: KT-56
KP979B substitution
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KP979B datasheet
kp979b.pdf
Syntez Microelectronics KP979B SILICON MOS N-CHANNEL POWER TRANSISTOR 150 W, up to 230 MHz, Enhancement Mode The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range. Features Performance at 230 MHz, 28 Vdc Power Gain 13 dB Min Output Power 150 W Efficiency 50 % Min Absolute Maximum Ratings Parameters Sym Value U... See More ⇒
kp979a.pdf
Syntez Microelectronics KP979A SILICON MOS N-CHANNEL POWER TRANSISTOR 60 W, up to 230 MHz, Enhancement Mode The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range. Features Performance at 230 MHz, 28 Vdc Power Gain 14 dB Min Output Power 60 W Efficiency 50 % Min Absolute Maximum Ratings Parameters Sym Value Uni... See More ⇒
kp979vc.pdf
Syntez Microelectronics KP979VC SILICON MOS N-CHANNEL POWER TRANSISTOR 300 W, up to 230 MHz, Enhancement Mode The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range. Features Performance at 230 MHz, 50 Vdc Power Gain 14 dB Min Output Power 300 W Efficiency 50 % Min Absolute Maximum Ratings Parameters Sym Value ... See More ⇒
Detailed specifications: KP8N60F, KP8N65D, KP977AC, KP978A, KP978BC, KP978GC, KP978VC, KP979A, SI2302, KP979VC, KP980A, KP981A, KP981BC, KP981VC, KPA1716, KPA1750, KPA1758
Keywords - KP979B MOSFET specs
KP979B cross reference
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KP979B substitution
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