KP979B Datasheet and Replacement
Type Designator: KP979B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 206 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 190 pF
Package: KT-56
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KP979B Datasheet (PDF)
kp979b.pdf

Syntez MicroelectronicsKP979BSILICON MOS N-CHANNEL POWER TRANSISTOR150 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 13 dB Min Output Power: 150 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value U
kp979a.pdf

Syntez MicroelectronicsKP979ASILICON MOS N-CHANNEL POWER TRANSISTOR60 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 14 dB Min Output Power: 60 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value Uni
kp979vc.pdf

Syntez MicroelectronicsKP979VCSILICON MOS N-CHANNEL POWER TRANSISTOR300 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 50 Vdc Power Gain: 14 dB Min Output Power: 300 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP6679GI-HF | H7N1002LM | FCPF7N60YDTU | SM6A12NSFP | SPD04N60S5
Keywords - KP979B MOSFET datasheet
KP979B cross reference
KP979B equivalent finder
KP979B lookup
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History: AP6679GI-HF | H7N1002LM | FCPF7N60YDTU | SM6A12NSFP | SPD04N60S5



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