KP979VC Datasheet and Replacement
Type Designator: KP979VC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 460 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Cossⓘ - Output Capacitance: 180 pF
Package: KT-82
KP979VC substitution
KP979VC Datasheet (PDF)
kp979vc.pdf

Syntez MicroelectronicsKP979VCSILICON MOS N-CHANNEL POWER TRANSISTOR300 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 50 Vdc Power Gain: 14 dB Min Output Power: 300 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value
kp979a.pdf

Syntez MicroelectronicsKP979ASILICON MOS N-CHANNEL POWER TRANSISTOR60 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 14 dB Min Output Power: 60 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value Uni
kp979b.pdf

Syntez MicroelectronicsKP979BSILICON MOS N-CHANNEL POWER TRANSISTOR150 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 13 dB Min Output Power: 150 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value U
Datasheet: KP8N65D , KP977AC , KP978A , KP978BC , KP978GC , KP978VC , KP979A , KP979B , 7N60 , KP980A , KP981A , KP981BC , KP981VC , KPA1716 , KPA1750 , KPA1758 , KPA1764 .
History: STD30NE06LT4 | UPA2354 | PQ6S2JN | IRF6629PBF | MMBF5103 | VS3602GPMT | BSS84LT1
Keywords - KP979VC MOSFET datasheet
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History: STD30NE06LT4 | UPA2354 | PQ6S2JN | IRF6629PBF | MMBF5103 | VS3602GPMT | BSS84LT1



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