All MOSFET. KP979VC Datasheet

 

KP979VC Datasheet and Replacement


   Type Designator: KP979VC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   Cossⓘ - Output Capacitance: 180 pF
   Package: KT-82
 

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KP979VC Datasheet (PDF)

 ..1. Size:101K  syntez microelectronics
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KP979VC

Syntez MicroelectronicsKP979VCSILICON MOS N-CHANNEL POWER TRANSISTOR300 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 50 Vdc Power Gain: 14 dB Min Output Power: 300 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value

 9.1. Size:101K  syntez microelectronics
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KP979VC

Syntez MicroelectronicsKP979ASILICON MOS N-CHANNEL POWER TRANSISTOR60 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 14 dB Min Output Power: 60 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value Uni

 9.2. Size:101K  syntez microelectronics
kp979b.pdf pdf_icon

KP979VC

Syntez MicroelectronicsKP979BSILICON MOS N-CHANNEL POWER TRANSISTOR150 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 13 dB Min Output Power: 150 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value U

Datasheet: KP8N65D , KP977AC , KP978A , KP978BC , KP978GC , KP978VC , KP979A , KP979B , 7N60 , KP980A , KP981A , KP981BC , KP981VC , KPA1716 , KPA1750 , KPA1758 , KPA1764 .

History: STD30NE06LT4 | UPA2354 | PQ6S2JN | IRF6629PBF | MMBF5103 | VS3602GPMT | BSS84LT1

Keywords - KP979VC MOSFET datasheet

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