KP981VC
MOSFET. Datasheet pdf. Equivalent
Type Designator: KP981VC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 87.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 50
pF
Package: KT-81
KP981VC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KP981VC
Datasheet (PDF)
..1. Size:95K syntez microelectronics
kp981vc.pdf
Syntez MicroelectronicsSILICON MOS N-CHANNEL RF POWER TRANSISTORKP981VC20 W, up to 500 MHz, Enhancement Mode________________________________________________Designed primarily for wideband largesignal outputand driver from 30500 MHz.Features: Performance at 500 MHz, 12.5 Vdc Power Gain: 10 dB Min Output Power: 20 W Efficiency: 50 % MinAbsolute Maximum Rating
9.1. Size:99K syntez microelectronics
kp981a.pdf
Syntez MicroelectronicsSILICON MOS N-CHANNEL RF POWER TRANSISTORKP981A5 W, up to 500 MHz, Enhancement Mode________________________________________________Designed primarily for wideband largesignal outputand driver from 30500 MHz.Features: Performance at 500 MHz, 12.5 Vdc Power Gain: 10 dB Min Output Power: 5 W Efficiency: 50 % MinAbsolute Maximum Ratings
9.2. Size:95K syntez microelectronics
kp981bc.pdf
Syntez MicroelectronicsSILICON MOS N-CHANNEL RF POWER TRANSISTORKP981BC10 W, up to 500 MHz, Enhancement Mode________________________________________________Designed primarily for wideband largesignal outputand driver from 30500 MHz.Features: Performance at 500 MHz, 12.5 Vdc Power Gain: 10 dB Min Output Power: 10 W Efficiency: 50 % MinAbsolute Maximum Rating
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