All MOSFET. KQB12P20 Datasheet

 

KQB12P20 MOSFET. Datasheet pdf. Equivalent

Type Designator: KQB12P20

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 11.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31 nC

Rise Time (tr): 195 nS

Drain-Source Capacitance (Cd): 190 pF

Maximum Drain-Source On-State Resistance (Rds): 0.47 Ohm

Package: TO-263

KQB12P20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KQB12P20 Datasheet (PDF)

1.1. kqb12p20.pdf Size:195K _update_mosfet

KQB12P20
KQB12P20

SMD Type Transistors SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors Product specification KQB12P20 TO-263 Unit: mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 -11.5A, -200V, RDS(on) =0.47 @VGS =-10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche te

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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