KQB12P20 MOSFET. Datasheet pdf. Equivalent
Type Designator: KQB12P20
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 11.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 31 nC
Rise Time (tr): 195 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 0.47 Ohm
Package: TO-263
KQB12P20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KQB12P20 Datasheet (PDF)
1.1. kqb12p20.pdf 
Size:195K _update_mosfet
SMD Type Transistors SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors Product specification KQB12P20 TO-263 Unit: mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 -11.5A, -200V, RDS(on) =0.47 @VGS =-10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche te
Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .
