All MOSFET. KQB12P20 Datasheet

 

KQB12P20 Datasheet and Replacement


   Type Designator: KQB12P20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 195 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO-263
 

 KQB12P20 substitution

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KQB12P20 Datasheet (PDF)

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KQB12P20

SMD Type TransistorsSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsProduct specificationKQB12P20TO-263Unit: mmFeatures4.57+0.2-0.2+0.11.27-0.1-11.5A, -200V, RDS(on) =0.47 @VGS =-10 VLow gate charge ( typical 31 nC)Low Crss ( typical 30pF)Fast switching+0.10.1max1.27-0.1100% avalanche te

Datasheet: KPA1792 , KPA1793 , KPA1816 , KPA1871 , KPA1873 , KPA1890 , KPA2790GR , KPCF8402 , P0903BDG , KQB27P06 , KQB2N30 , KQB2N50 , KQB2N60 , KQB2N80 , KQB3N30 , KQB3N40 , KQB4N50 .

History: IRF9Z14LPBF

Keywords - KQB12P20 MOSFET datasheet

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