KQB12P20 PDF and Equivalents Search

 

KQB12P20 Specs and Replacement

Type Designator: KQB12P20

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 195 nS

Cossⓘ - Output Capacitance: 190 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm

Package: TO-263

KQB12P20 substitution

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KQB12P20 datasheet

 ..1. Size:195K  tysemi
 kqb12p20.pdf pdf_icon

KQB12P20

SMD Type Transistors SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors Product specification KQB12P20 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 -11.5A, -200V, RDS(on) =0.47 @VGS =-10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche te... See More ⇒

Detailed specifications: KPA1792 , KPA1793 , KPA1816 , KPA1871 , KPA1873 , KPA1890 , KPA2790GR , KPCF8402 , IRF830 , KQB27P06 , KQB2N30 , KQB2N50 , KQB2N60 , KQB2N80 , KQB3N30 , KQB3N40 , KQB4N50 .

Keywords - KQB12P20 MOSFET specs

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