KQB12P20 PDF and Equivalents Search

 

KQB12P20 Specs and Replacement


   Type Designator: KQB12P20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 195 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO-263
 

 KQB12P20 substitution

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KQB12P20 datasheet

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KQB12P20

SMD Type Transistors SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors Product specification KQB12P20 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 -11.5A, -200V, RDS(on) =0.47 @VGS =-10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche te... See More ⇒

Detailed specifications: KPA1792 , KPA1793 , KPA1816 , KPA1871 , KPA1873 , KPA1890 , KPA2790GR , KPCF8402 , IRF830 , KQB27P06 , KQB2N30 , KQB2N50 , KQB2N60 , KQB2N80 , KQB3N30 , KQB3N40 , KQB4N50 .

History: 8N60KL-TF1-T | KQB27P06

Keywords - KQB12P20 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
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