All MOSFET. PHB3N60E Datasheet

 

 

PHB3N60E Datasheet and Replacement


   Type Designator: PHB3N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: SOT404
 

 PHB3N60E substitution

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PHB3N60E Datasheet (PDF)

 ..1. Size:79K  philips
 php3n60e phb3n60e.pdf pdf_icon

PHB3N60E

Philips Semiconductors Product specification PowerMOS transistors PHP3N60E, PHB3N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 Ag Low thermal resistanceRDS(ON) 4.4 sGENERAL DESCRIPTIONN-channel, enh

 9.1. Size:103K  philips
 php3n40e phb3n40e phd3n40e.pdf pdf_icon

PHB3N60E

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 Ag Low thermal resistanceRDS(ON) 3.5 sGENERAL DESCRIPTIONN-ch

 9.2. Size:78K  philips
 php3n50e phb3n50e.pdf pdf_icon

PHB3N60E

Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 3.4 Ag Low thermal resistanceRDS(ON) 3 sGENERAL DESCRIPTIONN-channel, enhan

Datasheet: PHB130N03LT , PHB21N06LT , PHB24N03LT , PHB2N50E , PHB2N60E , PHB37N06LT , PHB3N40E , PHB3N50E , AON7408 , PHB42N03LT , PHB44N06LT , PHB45N03LT , PHB4N60E , PHB50N03LT , PHB50N06LT , PHB55N03LT , PHB60N06LT .

History: HGW059N12S | NVD3055-094

Keywords - PHB3N60E MOSFET datasheet

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