All MOSFET. KQB3N30 Datasheet

 

KQB3N30 Datasheet and Replacement


   Type Designator: KQB3N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-263
 

 KQB3N30 substitution

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KQB3N30 Datasheet (PDF)

 ..1. Size:112K  tysemi
 kqb3n30.pdf pdf_icon

KQB3N30

SMD Type ICSMD Type TransistorsProduct specificationKQB3N30TO-263Unit: mmFeatures4.57+0.2-0.2+0.11.27-0.13.2A, 300 V. RDS(ON) =2.2 @VGS =10VLow gate charge (typical 5.5nC)Low Crss(typical 6.0pF)Fast switching+0.10.1max1.27-0.1100% avalanche testedlmproved dv/dt capability0.81+0.1-0.12.541gate1Gate2.54+0.2 +0.2-0.2 +0.15.08-0.1 0.4-0.22drai

 9.1. Size:130K  tysemi
 kqb3n40.pdf pdf_icon

KQB3N30

SMD Type ICSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB3N40TO-263Unit: mmFeatures2.5A, 400 V. RDS(ON) =3.4 @VGS =10V4.57+0.2-0.2+0.11.27-0.1Low gate charge (typical 6.0nC)Low Crss(typical 4.2pF)Fast switching100% avalanche tested+0.10.1max1.27-0.1lmproved dv/dt capability0.81+0.1-0.12.541gate1Gate2.54+0.2 +0.2-0.2 +0.15.

Datasheet: KPA2790GR , KPCF8402 , KQB12P20 , KQB27P06 , KQB2N30 , KQB2N50 , KQB2N60 , KQB2N80 , 2SK3918 , KQB3N40 , KQB4N50 , KQB4P40 , KQB5N20 , KQB5N60 , KQB630 , KQB6N25 , KQB6N70 .

History: AP4002J-HF | STP5N62K3 | AUIRF7739L2 | IPA80R650CE | 2N65L-TF2-T | IPA65R420CFD | L2N7002SLT1G

Keywords - KQB3N30 MOSFET datasheet

 KQB3N30 cross reference
 KQB3N30 equivalent finder
 KQB3N30 lookup
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