KQB3N30 PDF and Equivalents Search

 

KQB3N30 Specs and Replacement

Type Designator: KQB3N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-263

KQB3N30 substitution

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KQB3N30 datasheet

 ..1. Size:112K  tysemi
 kqb3n30.pdf pdf_icon

KQB3N30

SMD Type IC SMD Type Transistors Product specification KQB3N30 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 3.2A, 300 V. RDS(ON) =2.2 @VGS =10V Low gate charge (typical 5.5nC) Low Crss(typical 6.0pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche tested lmproved dv/dt capability 0.81+0.1 -0.1 2.54 1gate 1Gate 2.54+0.2 +0.2 -0.2 +0.1 5.08-0.1 0.4-0.2 2drai... See More ⇒

 9.1. Size:130K  tysemi
 kqb3n40.pdf pdf_icon

KQB3N30

SMD Type IC SMD Type Transistors SMDType SMDType IC Product specification KQB3N40 TO-263 Unit mm Features 2.5A, 400 V. RDS(ON) =3.4 @VGS =10V 4.57+0.2 -0.2 +0.1 1.27-0.1 Low gate charge (typical 6.0nC) Low Crss(typical 4.2pF) Fast switching 100% avalanche tested +0.1 0.1max 1.27-0.1 lmproved dv/dt capability 0.81+0.1 -0.1 2.54 1gate 1Gate 2.54+0.2 +0.2 -0.2 +0.1 5.... See More ⇒

Detailed specifications: KPA2790GR, KPCF8402, KQB12P20, KQB27P06, KQB2N30, KQB2N50, KQB2N60, KQB2N80, EMB04N03H, KQB3N40, KQB4N50, KQB4P40, KQB5N20, KQB5N60, KQB630, KQB6N25, KQB6N70

Keywords - KQB3N30 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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