KQB6N70 MOSFET Datasheet: N-Ch, 700V, 6.2A. Full specification with pinout and replacement list

KQB6N70 Specs and Replacement

Type Designator: KQB6N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-263

KQB6N70 substitution

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KQB6N70 datasheet

..1. Size:221K tysemi
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SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB6N70 TO-263 Unit mm Features 4.57+0.2 6.2A, 700 V. RDS(ON) =1.5 @VGS =10V -0.2 +0.1 1.27-0.1 Low... See More ⇒

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SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB6N25 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 5.5A, 500 V. RDS(ON) =1 @VGS =10 V Low gate charge (typical 6.6nC) Low Crss(typical 7.5pF) Fast switching ... See More ⇒

Detailed specifications: KQB3N30, KQB3N40, KQB4N50, KQB4P40, KQB5N20, KQB5N60, KQB630, KQB6N25, IRF730, KQB9N50, KQD1P50, KQD3P50, KQD5P10, KQS4900, KQS4901, KRF1302S, KRF2805S