All MOSFET. KQB6N70 Datasheet

 

KQB6N70 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KQB6N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   Rise Time (tr): 70 nS
   Drain-Source Capacitance (Cd): 125 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
   Package: TO-263

 KQB6N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KQB6N70 Datasheet (PDF)

 ..1. Size:221K  tysemi
kqb6n70.pdf

KQB6N70
KQB6N70

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB6N70TO-263Unit: mmFeatures4.57+0.26.2A, 700 V. RDS(ON) =1.5 @VGS =10V -0.2+0.11.27-0.1Low

 9.1. Size:203K  tysemi
kqb6n25.pdf

KQB6N70
KQB6N70

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB6N25TO-263Unit: mmFeatures4.57+0.2-0.2+0.11.27-0.15.5A, 500 V. RDS(ON) =1 @VGS =10 VLow gate charge (typical 6.6nC)Low Crss(typical 7.5pF)Fast switching

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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