All MOSFET. KRF2805S Datasheet

 

KRF2805S MOSFET. Datasheet pdf. Equivalent


   Type Designator: KRF2805S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 135 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 1190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: TO-263

 KRF2805S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KRF2805S Datasheet (PDF)

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 krf2805s.pdf

KRF2805S KRF2805S

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specificationKRF2805STO-263Unit: mmFeaturesAdvanced Process Technology4.57+0.2-0.2+0.11.27-0.1Ultra Low On-ResistanceDynamic dv/dt Rating175 Operating TemperatureFast Switching+0.10.1max1.27-0.1Repetitive Avalanche

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