PHB4N60E Specs and Replacement

Type Designator: PHB4N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: SOT404

PHB4N60E substitution

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PHB4N60E datasheet

 ..1. Size:80K  philips
 php4n60e phb4n60e.pdf pdf_icon

PHB4N60E

Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 A g Low thermal resistance RDS(ON) 2.5 s GENERAL DESCRIPTION N-channel, enh... See More ⇒

 9.1. Size:260K  philips
 phb4nd40e.pdf pdf_icon

PHB4N60E

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Detailed specifications: PHB2N60E, PHB37N06LT, PHB3N40E, PHB3N50E, PHB3N60E, PHB42N03LT, PHB44N06LT, PHB45N03LT, IRF9540N, PHB50N03LT, PHB50N06LT, PHB55N03LT, PHB60N06LT, PHB65N06LT, PHB69N03LT, PHB6N50E, PHB6N60E

Keywords - PHB4N60E MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs