PHB65N06LT Specs and Replacement

Type Designator: PHB65N06LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Id| ⓘ - Maximum Drain Current: 63 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOT404

PHB65N06LT substitution

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PHB65N06LT datasheet

 ..1. Size:56K  philips
 phb65n06lt.pdf pdf_icon

PHB65N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB65N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 63 A the device fea... See More ⇒

 6.1. Size:55K  philips
 phb65n06t 1.pdf pdf_icon

PHB65N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB65N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 63 A trench technology the devic... See More ⇒

Detailed specifications: PHB42N03LT, PHB44N06LT, PHB45N03LT, PHB4N60E, PHB50N03LT, PHB50N06LT, PHB55N03LT, PHB60N06LT, IRFP260, PHB69N03LT, PHB6N50E, PHB6N60E, PHB6ND50E, PHB7N60E, PHB80N06LT, PHB87N03LT, PHB8N50E

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