All MOSFET. PHB65N06LT Datasheet

 

PHB65N06LT Datasheet and Replacement


   Type Designator: PHB65N06LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Id|ⓘ - Maximum Drain Current: 63 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOT404
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PHB65N06LT Datasheet (PDF)

 ..1. Size:56K  philips
 phb65n06lt.pdf pdf_icon

PHB65N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB65N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 63 Athe device fea

 6.1. Size:55K  philips
 phb65n06t 1.pdf pdf_icon

PHB65N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB65N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 63 Atrench technology the devic

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History: FDMS9620S | IRFI7536G | WMM11N80M3

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