KXU03N25 MOSFET. Datasheet pdf. Equivalent
Type Designator: KXU03N25
Marking Code: 3N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.8 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 57 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-252
KXU03N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KXU03N25 Datasheet (PDF)
kxu03n25.pdf
SMD Type MOSFETN-Channel MOSFETKXU03N25TO-252Unit: mm Features6.50+0.15 2.30+0.1-0.15 -0.1+0.2 +0.8 VDS (V) = 250V5.30-0.2 0.50-0.7 RDS(ON) 2 (VGS = 10V)0.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.1+0.151. Gate4.60-0.152. Drain3. Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDSS 250
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SVT035R5NT
History: SVT035R5NT
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