L2SK3018WT1G Datasheet and Replacement
Type Designator: L2SK3018WT1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SC-70
L2SK3018WT1G substitution
L2SK3018WT1G Datasheet (PDF)
l2sk3018wt1g s-l2sk3018wt1g.pdf
L2SK3018WT1GS-L2SK3018WT1GN-channel MOSFET100 mA, 30 V1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low on-resistance.Drain (3)Fast switching sp
l2sk3018wt1g.pdf
LESHAN RADIO COMPANY, LTD.Silicon N-channel MOSFETL2SK3018WT1G100 mA, 30 V3 Features 1) Low on-resistance. 12) Fast switching speed. 23) Low voltage drive (2.5V) makes this device ideal for portable equipment.4) Easily designed drive circuits. SC-705) Easy to parallel. We declare that the material of product compliance with RoHS requirements.N - ChannelMAX
l2sk3019lt1g.pdf
LESHAN RADIO COMPANY, LTD.Silicon N-Channel MOSFET L2SK3019LT1GApplications3Interfacing,switching(30V,100mA)1Features 2Low on-resistanceSOT 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipmentEquivalent circuitDrive circuits can be simpleDrainParallel use is easywe declare that the material of product compliance with RoHS
Datasheet: L2N60D , L2N60F , L2N60I , L2N60P , L2N7002DMT1G , L2N7002DW1T1G , L2N7002LT1G , L2N7002WT1G , IRF3710 , L2SK3019LT1G , LDN9926ET1G , LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , LN100 , LND01 .
History: SI4N60-TN3-R | L2N7002WT1G
Keywords - L2SK3018WT1G MOSFET datasheet
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L2SK3018WT1G substitution
L2SK3018WT1G replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SI4N60-TN3-R | L2N7002WT1G
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