LF2802A Datasheet and Replacement
Type Designator: LF2802A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.7 A
Tjⓘ - Maximum Junction Temperature: 200 °C
Cossⓘ - Output Capacitance: 3.75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 25 Ohm
Package: SOT-443A
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LF2802A Datasheet (PDF)
lf2802a.pdf

LF2802A RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 2W, 500-1000MHz, 28V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications Broadband linear operation 500 MHz to 1400 MHz ABSOLUTE MAXIMUM RAT
lf2805a.pdf

LF2805A RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 5W, 500-1000MHz, 28V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications Broadband linear operation 500 MHz to 1400 MHz ABSOLUTE MAXIMUM RAT
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SQ9407EY-T1 | CHM85A3PAGP | ALD1103DB | SML100L16 | SFFX054Z | TK7P65W
Keywords - LF2802A MOSFET datasheet
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History: SQ9407EY-T1 | CHM85A3PAGP | ALD1103DB | SML100L16 | SFFX054Z | TK7P65W



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