LF2802A Specs and Replacement

Type Designator: LF2802A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 3.75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 25 Ohm

Package: SOT-443A

LF2802A substitution

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LF2802A datasheet

 ..1. Size:134K  macom
 lf2802a.pdf pdf_icon

LF2802A

LF2802A RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 2W, 500-1000MHz, 28V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications Broadband linear operation 500 MHz to 1400 MHz ABSOLUTE MAXIMUM RAT... See More ⇒

 9.1. Size:137K  macom
 lf2805a.pdf pdf_icon

LF2802A

LF2805A RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 5W, 500-1000MHz, 28V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications Broadband linear operation 500 MHz to 1400 MHz ABSOLUTE MAXIMUM RAT... See More ⇒

Detailed specifications: L2N7002DMT1G, L2N7002DW1T1G, L2N7002LT1G, L2N7002WT1G, L2SK3018WT1G, L2SK3019LT1G, LDN9926ET1G, LDP9933ET1G, 2N7000, LF2805A, LJ2015-53, LN100, LND01, LND150K1, LND150N3, LND150N8, LNTA4001NT1G

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