All MOSFET. LJ2015-53 Datasheet

 

LJ2015-53 Datasheet and Replacement


   Type Designator: LJ2015-53
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO-8
 

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LJ2015-53 Datasheet (PDF)

 ..1. Size:70K  china
 cs7456 lj2015-53.pdf pdf_icon

LJ2015-53

LJ2015-53CS7456DP N P T =25 1.9 WD AI V =10V,T =25 5.7 AD GS AI 40 ADMV 20 VGST +150 jmT -55 +150 stgR 65thJA /WR 1.8thJCBV V =0V,I =0.25mA 100 VDSS GS DV =10V,I =9.3A 0.025

 6.1. Size:105K  china
 lj2015-52.pdf pdf_icon

LJ2015-53

LJ2015-52FD75C NPN P T =25 75 WCM CI 10 ACMT 150 jmT -55~150 stgV I 2mA 50 V(BR)CBO CBV I 2mA 50 V(BR)CEO CEI V =20V 2 mACBO CBI V =20V 2 mACEO EBV 2.5 VBEsatI =5ACI =0.5AB

Datasheet: L2N7002LT1G , L2N7002WT1G , L2SK3018WT1G , L2SK3019LT1G , LDN9926ET1G , LDP9933ET1G , LF2802A , LF2805A , 2SK3878 , LN100 , LND01 , LND150K1 , LND150N3 , LND150N8 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G .

History: 2SK2576 | IXTH6N150 | ELM14430AA | RJK0629DPE | CJD4410 | IRF3707ZCSPBF | 2N3922

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