All MOSFET. LND150K1 Datasheet

 

LND150K1 Datasheet and Replacement


   Type Designator: LND150K1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.013 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1000 Ohm
   Package: SOT-23
 

 LND150K1 substitution

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LND150K1 Datasheet (PDF)

 8.1. Size:621K  supertex
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LND150K1

LND150N-Channel Depletion-ModeDMOS FETFeatures General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND1

Datasheet: L2SK3019LT1G , LDN9926ET1G , LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , LN100 , LND01 , 7N65 , LND150N3 , LND150N8 , LNTA4001NT1G , LNTA7002NT1G , LNTR4003NLT1G , LO4459PT1G , LP0701LG , LP0701N3 .

History: YJD30N02A | AM2394NE | RQA0008NXAQS | VBA3211 | WMN36N60C4 | APT6029BLL | FHP5N65B

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