PHB7N60E Datasheet and Replacement
Type Designator: PHB7N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT404
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PHB7N60E Datasheet (PDF)
php7n60e phb7n60e phw7n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 7 Ag Low thermal resistanceRDS(ON) 1.2 sGENERAL DESCRIPTIONN-chan
Datasheet: PHB50N06LT , PHB55N03LT , PHB60N06LT , PHB65N06LT , PHB69N03LT , PHB6N50E , PHB6N60E , PHB6ND50E , AON7506 , PHB80N06LT , PHB87N03LT , PHB8N50E , PHB8ND50E , PHB9N60E , PHD10N10E , PHD12N10E , PHD2N50E .
History: SM6A12NSFP | FCPF7N60YDTU
Keywords - PHB7N60E MOSFET datasheet
PHB7N60E cross reference
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History: SM6A12NSFP | FCPF7N60YDTU
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