All MOSFET. PHB7N60E Datasheet

 

PHB7N60E Datasheet and Replacement


   Type Designator: PHB7N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: SOT404
 

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PHB7N60E Datasheet (PDF)

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PHB7N60E

Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 7 Ag Low thermal resistanceRDS(ON) 1.2 sGENERAL DESCRIPTIONN-chan

Datasheet: PHB50N06LT , PHB55N03LT , PHB60N06LT , PHB65N06LT , PHB69N03LT , PHB6N50E , PHB6N60E , PHB6ND50E , TK10A60D , PHB80N06LT , PHB87N03LT , PHB8N50E , PHB8ND50E , PHB9N60E , PHD10N10E , PHD12N10E , PHD2N50E .

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