All MOSFET. LP2301ALT1G Datasheet

 

LP2301ALT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: LP2301ALT1G
   Marking Code: 01A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.2 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT-23

 LP2301ALT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LP2301ALT1G Datasheet (PDF)

 ..1. Size:383K  lrc
 lp2301alt1g.pdf

LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET FEATURES RDS(ON) 110m@VGS=-4.5V LP2301ALT1G RDS(ON) 150m@VGS=-2.5V Super high density cell design for extremely low RDS(ON) 3APPLICATIONS 1 Power Management in Note book 2 Portable Equipment SOT 23 Battery Powered System Load Switch DSC 3Ordering Inform

 8.1. Size:544K  lrc
 lp2301lt1g.pdf

LP2301ALT1G LP2301ALT1G

 8.2. Size:907K  lrc
 lp2301blt1g lp2301blt3g.pdf

LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP2301BLT1GV = -20V DSR Vgs@-4.5V, Ids@-2.8A = 100 mDS(ON), m 3RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2Fully Characterized Avalanche Voltage and Current SOT 23 (TO236AB)Improved Shoot-Through FOM

 9.1. Size:270K  lrc
 lp2307lt1g.pdf

LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.16V P-Channel Enhancement-Mode MOSFET LP2307LT1GVDS= -16V R Vgs@-4.5V, Ids@-4.7A = 60 mDS(ON), 3mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 100Features 1Advanced trench process technology 2High Density Cell Design For Ultra Low On-Resistance SOT 23 (TO236AB)DSimple Drive Requirement Small Package Outline

 9.2. Size:503K  lrc
 lp2305lt1g.pdf

LP2301ALT1G LP2301ALT1G

 9.3. Size:497K  lrc
 lp2305dslt1g s-lp2305dslt1g.pdf

LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.12V P-Channel Enhancement-Mode MOSFET LP2305DSLT1GV = -12V DSS-LP2305DSLT1GRDS(ON), Vgs@-4.5V, Ids@"3.5A = 68mR 3A = 81DS(ON), Vgs@-2.5V, Ids@" mR 2A = 118 mDS(ON), Vgs@-1.8V, Ids@"3Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2SOT 23 (TO236AB)Fully Characterized Avalan

 9.4. Size:698K  lrc
 lp2309lt1g lp2309lt3g.pdf

LP2301ALT1G LP2301ALT1G

LP2309LT1GP-Channel 60V (D-S) MOSFET1. FEATURESRDS(ON)215m , Vgs@-10V.RDS(ON)260m , Vgs@-4.5V.Super high density cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC current capability.SOT23(TO-236)We declare that the material of product compliance with RoHS requirements and Halogen Free.2. APPLICATIONSPower Man

 9.5. Size:371K  lrc
 lp2307lt1g s-lp2307lt1g.pdf

LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.16V P-Channel Enhancement-Mode MOSFET LP2307LT1GVDS= -16V S-LP2307LT1GR Vgs@-4.5V, Ids@-4.7A = 70 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 1103Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2S- Prefix for Automotive and Other Applications Requiring SOT 23 (TO236AB)Unique S

 9.6. Size:433K  lrc
 lp2305dslt1g.pdf

LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.8V P-Channel Enhancement-Mode MOSFET V = -8V DSLP2305DSLT1GRDS(ON), Vgs@-4.5V, Ids@"3.5A = 58mR 3A = 71DS(ON), Vgs@-2.5V, Ids@" mR 2A = 108 mDS(ON), Vgs@-1.8V, Ids@"3Features 1Advanced trench process technology 2High Density Cell Design For Ultra Low On-Resistance SOT 23 (TO236AB)Fully Characterized Avalanche Voltage and

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: LSE55R140GT

 

 
Back to Top