Справочник MOSFET. LP2301ALT1G

 

LP2301ALT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: LP2301ALT1G
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 46 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для LP2301ALT1G

 

 

LP2301ALT1G Datasheet (PDF)

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LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET FEATURES RDS(ON) 110m@VGS=-4.5V LP2301ALT1G RDS(ON) 150m@VGS=-2.5V Super high density cell design for extremely low RDS(ON) 3APPLICATIONS 1 Power Management in Note book 2 Portable Equipment SOT 23 Battery Powered System Load Switch DSC 3Ordering Inform

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LP2301ALT1G LP2301ALT1G

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 lp2301blt1g lp2301blt3g.pdf

LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP2301BLT1GV = -20V DSR Vgs@-4.5V, Ids@-2.8A = 100 mDS(ON), m 3RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2Fully Characterized Avalanche Voltage and Current SOT 23 (TO236AB)Improved Shoot-Through FOM

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 lp2307lt1g.pdf

LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.16V P-Channel Enhancement-Mode MOSFET LP2307LT1GVDS= -16V R Vgs@-4.5V, Ids@-4.7A = 60 mDS(ON), 3mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 100Features 1Advanced trench process technology 2High Density Cell Design For Ultra Low On-Resistance SOT 23 (TO236AB)DSimple Drive Requirement Small Package Outline

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 lp2305lt1g.pdf

LP2301ALT1G LP2301ALT1G

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 lp2305dslt1g s-lp2305dslt1g.pdf

LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.12V P-Channel Enhancement-Mode MOSFET LP2305DSLT1GV = -12V DSS-LP2305DSLT1GRDS(ON), Vgs@-4.5V, Ids@"3.5A = 68mR 3A = 81DS(ON), Vgs@-2.5V, Ids@" mR 2A = 118 mDS(ON), Vgs@-1.8V, Ids@"3Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2SOT 23 (TO236AB)Fully Characterized Avalan

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 lp2309lt1g lp2309lt3g.pdf

LP2301ALT1G LP2301ALT1G

LP2309LT1GP-Channel 60V (D-S) MOSFET1. FEATURESRDS(ON)215m , Vgs@-10V.RDS(ON)260m , Vgs@-4.5V.Super high density cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC current capability.SOT23(TO-236)We declare that the material of product compliance with RoHS requirements and Halogen Free.2. APPLICATIONSPower Man

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LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.16V P-Channel Enhancement-Mode MOSFET LP2307LT1GVDS= -16V S-LP2307LT1GR Vgs@-4.5V, Ids@-4.7A = 70 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 1103Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2S- Prefix for Automotive and Other Applications Requiring SOT 23 (TO236AB)Unique S

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 lp2305dslt1g.pdf

LP2301ALT1G LP2301ALT1G

LESHAN RADIO COMPANY, LTD.8V P-Channel Enhancement-Mode MOSFET V = -8V DSLP2305DSLT1GRDS(ON), Vgs@-4.5V, Ids@"3.5A = 58mR 3A = 71DS(ON), Vgs@-2.5V, Ids@" mR 2A = 108 mDS(ON), Vgs@-1.8V, Ids@"3Features 1Advanced trench process technology 2High Density Cell Design For Ultra Low On-Resistance SOT 23 (TO236AB)Fully Characterized Avalanche Voltage and

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