PHB80N06LT Specs and Replacement

Type Designator: PHB80N06LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOT404

PHB80N06LT substitution

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PHB80N06LT datasheet

 ..1. Size:57K  philips
 phb80n06lt.pdf pdf_icon

PHB80N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB80N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC)1 75 A the device fe... See More ⇒

 6.1. Size:56K  philips
 phb80n06t 1.pdf pdf_icon

PHB80N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB80N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC)1 75 A trench technology the devi... See More ⇒

Detailed specifications: PHB55N03LT, PHB60N06LT, PHB65N06LT, PHB69N03LT, PHB6N50E, PHB6N60E, PHB6ND50E, PHB7N60E, AON7410, PHB87N03LT, PHB8N50E, PHB8ND50E, PHB9N60E, PHD10N10E, PHD12N10E, PHD2N50E, PHD2N60E

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.