All MOSFET. PHB80N06LT Datasheet

 

PHB80N06LT Datasheet and Replacement


   Type Designator: PHB80N06LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOT404
 

 PHB80N06LT substitution

   - MOSFET ⓘ Cross-Reference Search

 

PHB80N06LT Datasheet (PDF)

 ..1. Size:57K  philips
 phb80n06lt.pdf pdf_icon

PHB80N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB80N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC)1 75 Athe device fe

 6.1. Size:56K  philips
 phb80n06t 1.pdf pdf_icon

PHB80N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB80N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC)1 75 Atrench technology the devi

Datasheet: PHB55N03LT , PHB60N06LT , PHB65N06LT , PHB69N03LT , PHB6N50E , PHB6N60E , PHB6ND50E , PHB7N60E , RFP50N06 , PHB87N03LT , PHB8N50E , PHB8ND50E , PHB9N60E , PHD10N10E , PHD12N10E , PHD2N50E , PHD2N60E .

History: FDMS7670

Keywords - PHB80N06LT MOSFET datasheet

 PHB80N06LT cross reference
 PHB80N06LT equivalent finder
 PHB80N06LT lookup
 PHB80N06LT substitution
 PHB80N06LT replacement

 

 
Back to Top

 


 
.