LRK7002WT1G Specs and Replacement
Type Designator: LRK7002WT1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.115 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: SOT-23
LRK7002WT1G substitution
- MOSFET ⓘ Cross-Reference Search
LRK7002WT1G datasheet
lrk7002wt1g.pdf
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET LRK7002WT1G Silicon N-Channel 3 Features 1 1) Low on-resistance. 2 2) Fast switching speed. 3) Low-voltage drive. SOT-23 (TO-236AB) 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 3 Device Marking and Ordering Information 1 Device Marking Shipping 6C 3000/Tape&Reel 6C LRK7002WT1G G... See More ⇒
Detailed specifications: LP2305LT1G, LP2307LT1G, LP3401LT1G, LP3407LT1G, LP3443LT1G, LP4101LT1G, LP4411ET1G, LP9435LT1G, IRF1010E, LS165, LS166, LS370, LS371, LSI1012XT1G, LXP152ALT1G, NUS5530MNR2G, NVA4001N
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IXFK52N60Q2
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