All MOSFET. LRK7002WT1G Datasheet

 

LRK7002WT1G Datasheet and Replacement


   Type Designator: LRK7002WT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.115 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT-23
 

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LRK7002WT1G Datasheet (PDF)

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LRK7002WT1G

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETLRK7002WT1GSilicon N-Channel3 Features11) Low on-resistance.22) Fast switching speed.3) Low-voltage drive.SOT-23 (TO-236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.3 Device Marking and Ordering Information1Device Marking Shipping6C 3000/Tape&Reel6CLRK7002WT1GG

Datasheet: LP2305LT1G , LP2307LT1G , LP3401LT1G , LP3407LT1G , LP3443LT1G , LP4101LT1G , LP4411ET1G , LP9435LT1G , IRF530 , LS165 , LS166 , LS370 , LS371 , LSI1012XT1G , LXP152ALT1G , NUS5530MNR2G , NVA4001N .

History: CTLM8110-M832D | HSS2306A

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