LRK7002WT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: LRK7002WT1G
Marking Code: 6C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.115 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: SOT-23
LRK7002WT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LRK7002WT1G Datasheet (PDF)
lrk7002wt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFETLRK7002WT1GSilicon N-Channel3 Features11) Low on-resistance.22) Fast switching speed.3) Low-voltage drive.SOT-23 (TO-236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.3 Device Marking and Ordering Information1Device Marking Shipping6C 3000/Tape&Reel6CLRK7002WT1GG
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