All MOSFET. LS165 Datasheet

 

LS165 Datasheet and Replacement


   Type Designator: LS165
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm
   Package: SOIC-8
 

 LS165 substitution

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LS165 Datasheet (PDF)

 ..1. Size:192K  linear-systems
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LS165

3N/LS165, 3N/LS166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN LS3N165, LS3N166 3N165, 3N166 ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (T =25C unless otherwise noted) ADrain-Source or Drain-Gate Voltage (NOTE 2) 3N165 40 V 3N166 30 V Gate-Gate Voltage 80 V SOIC TO-99 Drai

Datasheet: LP2307LT1G , LP3401LT1G , LP3407LT1G , LP3443LT1G , LP4101LT1G , LP4411ET1G , LP9435LT1G , LRK7002WT1G , IRF1407 , LS166 , LS370 , LS371 , LSI1012XT1G , LXP152ALT1G , NUS5530MNR2G , NVA4001N , NVA4153N .

Keywords - LS165 MOSFET datasheet

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