LS165 Specs and Replacement
Type Designator: LS165
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm
Package: SOIC-8
LS165 substitution
- MOSFET ⓘ Cross-Reference Search
LS165 datasheet
ls165 ls166.pdf
3N/LS165, 3N/LS166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN LS3N165, LS3N166 3N165, 3N166 ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (T =25 C unless otherwise noted) A Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 40 V 3N166 30 V Gate-Gate Voltage 80 V SOIC TO-99 Drai... See More ⇒
Detailed specifications: LP2307LT1G, LP3401LT1G, LP3407LT1G, LP3443LT1G, LP4101LT1G, LP4411ET1G, LP9435LT1G, LRK7002WT1G, IRFB3607, LS166, LS370, LS371, LSI1012XT1G, LXP152ALT1G, NUS5530MNR2G, NVA4001N, NVA4153N
Keywords - LS165 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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