All MOSFET. LSI1012XT1G Datasheet

 

LSI1012XT1G Datasheet and Replacement


   Type Designator: LSI1012XT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: SC-89
 

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LSI1012XT1G Datasheet (PDF)

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LSI1012XT1G

LESHAN RADIO COMPANY, LTD.N-Channel 1.8-V (G-S) MOSFETLSI1012XT1GFEATURESD TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD Protected: 2000 VD High-Side SwitchingD Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)D Fast Switching Speed: 10 nsSC-89BENEFITSD Ease in Driving SwitchesD Low Offset (Error) VoltageGate 1D Low-Voltage OperationD High-Speed Circui

 7.1. Size:477K  lrc
 lsi1012lt1g s-lsi1012lt1g.pdf pdf_icon

LSI1012XT1G

LESHAN RADIO COMPANY, LTD.LSI1012LT1GN-Channel 1.8-V (G-S) MOSFETS-LSI1012LT1GFEATURES3D TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD ProtectedD High-Side Switching1D Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)2D Fast Switching Speed: 10 nsD S- Prefix for Automotive and Other Applications Requiring SOT-23Unique Site and Control Change Requiremen

Datasheet: LP4101LT1G , LP4411ET1G , LP9435LT1G , LRK7002WT1G , LS165 , LS166 , LS370 , LS371 , IRFP450 , LXP152ALT1G , NUS5530MNR2G , NVA4001N , NVA4153N , NVA7002NT1G , NVB25P06 , NVB5404N , NVB5426N .

History: STI23NM60ND | SIHFI9520G | STW14NM50FD | BSB017N03LX3 | AOD2606

Keywords - LSI1012XT1G MOSFET datasheet

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