LSI1012XT1G PDF and Equivalents Search

 

LSI1012XT1G PDF Specs and Replacement


   Type Designator: LSI1012XT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 5 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: SC-89
 

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LSI1012XT1G PDF Specs

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LSI1012XT1G

LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G FEATURES D TrenchFETr Power MOSFET 1.8-V Rated D Gate-Source ESD Protected 2000 V D High-Side Switching D Low On-Resistance 0.7 W D Low Threshold 0.8 V (typ) D Fast Switching Speed 10 ns SC-89 BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage Gate 1 D Low-Voltage Operation D High-Speed Circui... See More ⇒

 7.1. Size:477K  lrc
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LSI1012XT1G

LESHAN RADIO COMPANY, LTD. LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET S-LSI1012LT1G FEATURES 3 D TrenchFETr Power MOSFET 1.8-V Rated D Gate-Source ESD Protected D High-Side Switching 1 D Low On-Resistance 0.7 W D Low Threshold 0.8 V (typ) 2 D Fast Switching Speed 10 ns D S- Prefix for Automotive and Other Applications Requiring SOT-23 Unique Site and Control Change Requiremen... See More ⇒

Detailed specifications: LP4101LT1G , LP4411ET1G , LP9435LT1G , LRK7002WT1G , LS165 , LS166 , LS370 , LS371 , NCEP15T14 , LXP152ALT1G , NUS5530MNR2G , NVA4001N , NVA4153N , NVA7002NT1G , NVB25P06 , NVB5404N , NVB5426N .

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