NUS5530MNR2G Datasheet. Specs and Replacement
Type Designator: NUS5530MNR2G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: DFN8
NUS5530MNR2G substitution
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NUS5530MNR2G datasheet
nus5530mnr2g.pdf
NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel FET with a http //onsemi.com PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. 1 8 Feat... See More ⇒
nus5530mn.pdf
NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel FET with a http //onsemi.com PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. 1 8 Feat... See More ⇒
nus5531mt.pdf
NUS5531MT Main Switch Power MOSFET and Single Charging BJT -12 V, -6.2 A, Single P-Channel FET with http //onsemi.com Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Package MOSFET V(BR)DSS RDS(on) TYP ID MAX This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and 32 mW @ -4.5 V -12 V -6.2 A optimizing charging... See More ⇒
Detailed specifications: LP9435LT1G, LRK7002WT1G, LS165, LS166, LS370, LS371, LSI1012XT1G, LXP152ALT1G, STP80NF70, NVA4001N, NVA4153N, NVA7002NT1G, NVB25P06, NVB5404N, NVB5426N, NVB5860N, NVB5860NL
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