All MOSFET. NVA4153N Datasheet

 

NVA4153N Datasheet and Replacement


   Type Designator: NVA4153N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 0.915 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: SOT-416
 

 NVA4153N substitution

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NVA4153N Datasheet (PDF)

 ..1. Size:67K  onsemi
 nva4153n nve4153n.pdf pdf_icon

NVA4153N

NTA4153N, NTE4153N,NVA4153N, NVE4153NSmall Signal MOSFET20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89http://onsemi.comFeatures Low RDS(on) Improving System EfficiencyV(BR)DSS RDS(on) TYP ID MAX Low Threshold Voltage, 1.5 V Rated0.127 W @ 4.5 V ESD Protected Gate0.170 W @ 2.5 V20 V 915 mA NV Prefix for Automotive and Other Application

 ..2. Size:72K  onsemi
 nta4153n nte4153n nva4153n nve4153n.pdf pdf_icon

NVA4153N

NTA4153N, NTE4153N,NVA4153N, NVE4153NSmall Signal MOSFET20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89http://onsemi.comFeatures Low RDS(on) Improving System EfficiencyV(BR)DSS RDS(on) TYP ID MAX Low Threshold Voltage, 1.5 V Rated0.127 W @ 4.5 V ESD Protected Gate0.170 W @ 2.5 V20 V 915 mA NV Prefix for Automotive and Other Application

Datasheet: LS165 , LS166 , LS370 , LS371 , LSI1012XT1G , LXP152ALT1G , NUS5530MNR2G , NVA4001N , IRFZ24N , NVA7002NT1G , NVB25P06 , NVB5404N , NVB5426N , NVB5860N , NVB5860NL , NVB60N06 , NVB6410AN .

History: PJU7NA65

Keywords - NVA4153N MOSFET datasheet

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