NVA4153N Datasheet. Specs and Replacement

Type Designator: NVA4153N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.915 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.4 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: SOT-416

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NVA4153N datasheet

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NVA4153N

NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89 http //onsemi.com Features Low RDS(on) Improving System Efficiency V(BR)DSS RDS(on) TYP ID MAX Low Threshold Voltage, 1.5 V Rated 0.127 W @ 4.5 V ESD Protected Gate 0.170 W @ 2.5 V 20 V 915 mA NV Prefix for Automotive and Other Application... See More ⇒

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 nta4153n nte4153n nva4153n nve4153n.pdf pdf_icon

NVA4153N

NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89 http //onsemi.com Features Low RDS(on) Improving System Efficiency V(BR)DSS RDS(on) TYP ID MAX Low Threshold Voltage, 1.5 V Rated 0.127 W @ 4.5 V ESD Protected Gate 0.170 W @ 2.5 V 20 V 915 mA NV Prefix for Automotive and Other Application... See More ⇒

Detailed specifications: LS165, LS166, LS370, LS371, LSI1012XT1G, LXP152ALT1G, NUS5530MNR2G, NVA4001N, STP80NF70, NVA7002NT1G, NVB25P06, NVB5404N, NVB5426N, NVB5860N, NVB5860NL, NVB60N06, NVB6410AN

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