NVB25P06 Datasheet. Specs and Replacement

Type Designator: NVB25P06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 27.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 33 nC

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 345 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: D2PAK

NVB25P06 substitution

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NVB25P06 datasheet

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Detailed specifications: LS370, LS371, LSI1012XT1G, LXP152ALT1G, NUS5530MNR2G, NVA4001N, NVA4153N, NVA7002NT1G, BS170, NVB5404N, NVB5426N, NVB5860N, NVB5860NL, NVB60N06, NVB6410AN, NVB6411AN, NVB6412AN

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