All MOSFET. NVB5404N Datasheet

 

NVB5404N Datasheet and Replacement


   Type Designator: NVB5404N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 254 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 167 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 1075 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: D2PAK
 

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NVB5404N Datasheet (PDF)

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NVB5404N

NTB5404N, NTP5404N,NVB5404NPower MOSFET40 V, 167 A, Single N-Channel, D2PAK &TO-220Featureswww.onsemi.com Low RDS(on) High Current CapabilityID MAXV(BR)DSS RDS(ON) MAX (Note 1) Low Gate Charge AEC-Q101 Qualified and PPAP Capable - NVB5404N 40 V 4.5 mW @ 10 V 167 A These Devices are Pb-Free and are RoHS CompliantDApplications Electronic Brake Sys

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NVB5404N

NTB5426N, NTP5426N,NVB5426NPower MOSFET120 Amps, 60 VoltsN-Channel D2PAK, TO-220http://onsemi.comFeatures Low RDS(on)ID MAX High Current CapabilityV(BR)DSS RDS(ON) MAX (Note 1) Avalanche Energy Specified60 V 6.0 mW @ 10 V 120 A AEC Q101 Qualified - NVB5426N These Devices are Pb-Free and are RoHS CompliantApplications N-Channel Power Supplies D

Datasheet: LS371 , LSI1012XT1G , LXP152ALT1G , NUS5530MNR2G , NVA4001N , NVA4153N , NVA7002NT1G , NVB25P06 , 2SK3568 , NVB5426N , NVB5860N , NVB5860NL , NVB60N06 , NVB6410AN , NVB6411AN , NVB6412AN , NVB6413AN .

History: IRLML5103GPBF | TK3R3A06PL | NDT4N60 | NVB5860N | KU2310Q | NDT452AP-NL | CS16N65FA9H

Keywords - NVB5404N MOSFET datasheet

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