All MOSFET. NVB5404N Datasheet

 

NVB5404N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVB5404N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 254 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 167 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 1075 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: D2PAK

 NVB5404N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVB5404N Datasheet (PDF)

 ..1. Size:77K  onsemi
 nvb5404n.pdf

NVB5404N NVB5404N

NTB5404N, NTP5404N,NVB5404NPower MOSFET40 V, 167 A, Single N-Channel, D2PAK &TO-220Featureswww.onsemi.com Low RDS(on) High Current CapabilityID MAXV(BR)DSS RDS(ON) MAX (Note 1) Low Gate Charge AEC-Q101 Qualified and PPAP Capable - NVB5404N 40 V 4.5 mW @ 10 V 167 A These Devices are Pb-Free and are RoHS CompliantDApplications Electronic Brake Sys

 9.1. Size:142K  onsemi
 nvb5426n.pdf

NVB5404N NVB5404N

NTB5426N, NTP5426N,NVB5426NPower MOSFET120 Amps, 60 VoltsN-Channel D2PAK, TO-220http://onsemi.comFeatures Low RDS(on)ID MAX High Current CapabilityV(BR)DSS RDS(ON) MAX (Note 1) Avalanche Energy Specified60 V 6.0 mW @ 10 V 120 A AEC Q101 Qualified - NVB5426N These Devices are Pb-Free and are RoHS CompliantApplications N-Channel Power Supplies D

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RFD16N05L | SWF6N65K

 

 
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