NVB5404N Datasheet. Specs and Replacement

Type Designator: NVB5404N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 254 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 167 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V

Qg ⓘ - Total Gate Charge: 125 nC

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 1075 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: D2PAK

NVB5404N substitution

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NVB5404N datasheet

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NVB5404N

NTB5404N, NTP5404N, NVB5404N Power MOSFET 40 V, 167 A, Single N-Channel, D2PAK & TO-220 Features www.onsemi.com Low RDS(on) High Current Capability ID MAX V(BR)DSS RDS(ON) MAX (Note 1) Low Gate Charge AEC-Q101 Qualified and PPAP Capable - NVB5404N 40 V 4.5 mW @ 10 V 167 A These Devices are Pb-Free and are RoHS Compliant D Applications Electronic Brake Sys... See More ⇒

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NVB5404N

NTB5426N, NTP5426N, NVB5426N Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220 http //onsemi.com Features Low RDS(on) ID MAX High Current Capability V(BR)DSS RDS(ON) MAX (Note 1) Avalanche Energy Specified 60 V 6.0 mW @ 10 V 120 A AEC Q101 Qualified - NVB5426N These Devices are Pb-Free and are RoHS Compliant Applications N-Channel Power Supplies D ... See More ⇒

Detailed specifications: LS371, LSI1012XT1G, LXP152ALT1G, NUS5530MNR2G, NVA4001N, NVA4153N, NVA7002NT1G, NVB25P06, 4N60, NVB5426N, NVB5860N, NVB5860NL, NVB60N06, NVB6410AN, NVB6411AN, NVB6412AN, NVB6413AN

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.