PHB8N50E
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB8N50E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 147
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 8.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85
Ohm
Package:
SOT404
PHB8N50E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB8N50E
Datasheet (PDF)
..1. Size:90K philips
php8n50e phb8n50e phw8n50e.pdf 
Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 8.5 Ag Low thermal resistanceRDS(ON) 0.85 sGENERAL DESCRIPTIONN-c
9.1. Size:90K philips
php8nd50e phb8nd50e phw8nd50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 8.5 A High thermal cycling performanceg Low thermal resistance RDS(ON) 0.85 Fast reverse
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