PHB8N50E Specs and Replacement

Type Designator: PHB8N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: SOT404

PHB8N50E substitution

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PHB8N50E datasheet

 ..1. Size:90K  philips
 php8n50e phb8n50e phw8n50e.pdf pdf_icon

PHB8N50E

Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 8.5 A g Low thermal resistance RDS(ON) 0.85 s GENERAL DESCRIPTION N-c... See More ⇒

 9.1. Size:90K  philips
 php8nd50e phb8nd50e phw8nd50e.pdf pdf_icon

PHB8N50E

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 8.5 A High thermal cycling performance g Low thermal resistance RDS(ON) 0.85 Fast reverse... See More ⇒

Detailed specifications: PHB65N06LT, PHB69N03LT, PHB6N50E, PHB6N60E, PHB6ND50E, PHB7N60E, PHB80N06LT, PHB87N03LT, 5N65, PHB8ND50E, PHB9N60E, PHD10N10E, PHD12N10E, PHD2N50E, PHD2N60E, PHD3055E, PHD3N40E

Keywords - PHB8N50E MOSFET specs

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