NVB6412AN Datasheet and Replacement
Type Designator: NVB6412AN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0182 Ohm
Package: D2PAK
NVB6412AN substitution
NVB6412AN Datasheet (PDF)
nvb6412an.pdf

NTB6412AN, NTP6412AN,NVB6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 18.2 mW @ 10 V 58 AQualified and PPAP Capable Th
ntb6412an ntp6412an nvb6412an.pdf

NTB6412AN, NTP6412AN,NVB6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 18.2 mW @ 10 V 58 AQualified and PPAP Capable Th
nvb6410an.pdf

NTB6410AN, NTP6410AN,NVB6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatureswww.onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring100 V 13 mW @ 10 V 76 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-Channel
ntb6410an ntp6410an nvb6410an.pdf

NTB6410AN, NTP6410AN,NVB6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatureswww.onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring100 V 13 mW @ 10 V 76 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-Channel
Datasheet: NVB25P06 , NVB5404N , NVB5426N , NVB5860N , NVB5860NL , NVB60N06 , NVB6410AN , NVB6411AN , IRFZ46N , NVB6413AN , NVD14N03R , NVD20N03L27 , NVD3055-094 , NVD3055-150 , NVD3055L170 , NVD4804N , NVD4805N .
History: IRLHM630PBF | H7N0405LD | NVB6413AN | APT6013B2LL | MDD3N40RH | IRFP15N60L | APT10057WVR
Keywords - NVB6412AN MOSFET datasheet
NVB6412AN cross reference
NVB6412AN equivalent finder
NVB6412AN lookup
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NVB6412AN replacement
History: IRLHM630PBF | H7N0405LD | NVB6413AN | APT6013B2LL | MDD3N40RH | IRFP15N60L | APT10057WVR



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