All MOSFET. NVB6413AN Datasheet

 

NVB6413AN Datasheet and Replacement


   Type Designator: NVB6413AN
   Marking Code: 6413AN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 51 nC
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: D2PAK
 

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NVB6413AN Datasheet (PDF)

 ..1. Size:132K  onsemi
 ntb6413an ntp6413an nvb6413an.pdf pdf_icon

NVB6413AN

NTB6413AN, NTP6413AN,NVB6413ANMOSFET Power,N-Channel100 V, 42 A, 28 mWwww.onsemi.comFeatures Low RDS(on)ID MAX High Current CapabilityV(BR)DSS RDS(ON) MAX (Note 1) 100% Avalanche Tested100 V 28 mW @ 10 V 42 A NVB Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-C

 ..2. Size:75K  onsemi
 nvb6413an.pdf pdf_icon

NVB6413AN

NTB6413AN, NTP6413AN,NVB6413ANN-Channel Power MOSFET100 V, 42 A, 28 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 28 mW @ 10 V 42 AQualified and PPAP Capable These

 8.1. Size:77K  onsemi
 nvb6412an.pdf pdf_icon

NVB6413AN

NTB6412AN, NTP6412AN,NVB6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 18.2 mW @ 10 V 58 AQualified and PPAP Capable Th

 8.2. Size:77K  onsemi
 nvb6410an.pdf pdf_icon

NVB6413AN

NTB6410AN, NTP6410AN,NVB6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatureswww.onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring100 V 13 mW @ 10 V 76 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-Channel

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