NVD4805N Datasheet. Specs and Replacement

Type Designator: NVD4805N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.3 nS

Cossⓘ - Output Capacitance: 610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: DPAK

NVD4805N substitution

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NVD4805N datasheet

 ..1. Size:116K  onsemi
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NVD4805N

NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q... See More ⇒

 ..2. Size:113K  onsemi
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NVD4805N

NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q... See More ⇒

 8.1. Size:114K  onsemi
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NVD4805N

NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.0 mW @... See More ⇒

 8.2. Size:113K  onsemi
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NVD4805N

NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 9.0 mW @ 10 V 30 V 58 A ... See More ⇒

Detailed specifications: NVB6412AN, NVB6413AN, NVD14N03R, NVD20N03L27, NVD3055-094, NVD3055-150, NVD3055L170, NVD4804N, 2N60, NVD4806N, NVD4808N, NVD4809N, NVD4810N, NVD4813NH, NVD4856N, NVD4C05N, NVD5117PL

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