Справочник MOSFET. NVD4805N

 

NVD4805N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVD4805N
   Маркировка: 4805N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 79 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 95 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 20.5 nC
   trⓘ - Время нарастания: 20.3 ns
   Cossⓘ - Выходная емкость: 610 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для NVD4805N

 

 

NVD4805N Datasheet (PDF)

 ..1. Size:116K  onsemi
 ntd4805n nvd4805n.pdf

NVD4805N NVD4805N

NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q

 ..2. Size:113K  onsemi
 nvd4805n.pdf

NVD4805N NVD4805N

NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q

 8.1. Size:114K  onsemi
 nvd4806n.pdf

NVD4805N NVD4805N

NTD4806N, NVD4806NPower MOSFET30 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.0 mW @

 8.2. Size:113K  onsemi
 nvd4809n.pdf

NVD4805N NVD4805N

NTD4809N, NVD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V30 V 58 A

 8.3. Size:117K  onsemi
 ntd4809n nvd4809n.pdf

NVD4805N NVD4805N

NTD4809N, NVD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V30 V 58 A

 8.4. Size:82K  onsemi
 nvd4804n.pdf

NVD4805N NVD4805N

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117

 8.5. Size:112K  onsemi
 nvd4808n.pdf

NVD4805N NVD4805N

NTD4808N, NVD4808NPower MOSFET30 V, 63 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q

 8.6. Size:89K  onsemi
 ntd4804n nvd4804n.pdf

NVD4805N NVD4805N

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117 A

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top