NVD4813NH Specs and Replacement
Type Designator: NVD4813NH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 35.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 40
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 19.5
nS
Cossⓘ -
Output Capacitance: 201
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013
Ohm
Package:
DPAK
-
MOSFET ⓘ Cross-Reference Search
NVD4813NH datasheet
..2. Size:108K onsemi
nvd4813nh.pdf 
NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring 13 mW @ 10 V Unique Site and Contro... See More ⇒
8.1. Size:148K onsemi
ntd4810n-1g nvd4810n.pdf 
NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10 mW @ ... See More ⇒
9.1. Size:114K onsemi
nvd4806n.pdf 
NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.0 mW @... See More ⇒
9.2. Size:113K onsemi
nvd4809n.pdf 
NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 9.0 mW @ 10 V 30 V 58 A ... See More ⇒
9.3. Size:116K onsemi
ntd4805n nvd4805n.pdf 
NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q... See More ⇒
9.4. Size:117K onsemi
ntd4809n nvd4809n.pdf 
NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 9.0 mW @ 10 V 30 V 58 A ... See More ⇒
9.5. Size:82K onsemi
nvd4804n.pdf 
NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117 ... See More ⇒
9.6. Size:113K onsemi
nvd4805n.pdf 
NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q... See More ⇒
9.7. Size:112K onsemi
nvd4808n.pdf 
NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q... See More ⇒
9.8. Size:115K onsemi
nvd4856n.pdf 
NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring 4.7 mW @ 10 V 25 V 89 A U... See More ⇒
9.9. Size:89K onsemi
ntd4804n nvd4804n.pdf 
NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117 A ... See More ⇒
Detailed specifications: NVD3055-150
, NVD3055L170
, NVD4804N
, NVD4805N
, NVD4806N
, NVD4808N
, NVD4809N
, NVD4810N
, IRFB31N20D
, NVD4856N
, NVD4C05N
, NVD5117PL
, NVD5414N
, NVD5484NL
, NVD5490NL
, NVD5802N
, NVD5805N
.
History: AS3422
| RFD8P06E
| DH060N07D
| NTUD3169CZ
| IPD80R1K0CE
| BLF879P
| 2SK3977
Keywords - NVD4813NH MOSFET specs
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NVD4813NH equivalent finder
NVD4813NH pdf lookup
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.