NVD5414N Datasheet and Replacement
Type Designator: NVD5414N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: DPAK
NVD5414N substitution
NVD5414N Datasheet (PDF)
nvd5414n.pdf

NTD5414N, NVD5414NPower MOSFET24 A, 60 V Single N-Channel DPAKFeatures Low RDS(on) High Current Capability http://onsemi.com Avalanche Energy SpecifiedID MAX NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable60 V 37 mW @ 10 V 24 A These Dev
nvd5484nl.pdf

NVD5484NLPower MOSFET60 V, 17 mW, 54 A, Single N-ChannelLogic Level, DPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com High Current Capability Avalanche Energy SpecifiedV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 17 mW @ 10 V60 V 54 ACompliant23 mW @ 4.5 V
nvd5490nl.pdf

NVD5490NLPower MOSFET60 V, 64 mW, 17 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS64 mW @ 10 VCompliant60 V 17 A85 mW @ 4.5 VMAXIMUM RATINGS (T
Datasheet: NVD4806N , NVD4808N , NVD4809N , NVD4810N , NVD4813NH , NVD4856N , NVD4C05N , NVD5117PL , RU7088R , NVD5484NL , NVD5490NL , NVD5802N , NVD5805N , NVD5806N , NVD5807N , NVD5890NL , NVD5890NT4G .
History: DMN2056U | IPT019N08N5 | AO4442 | HGA080N10A
Keywords - NVD5414N MOSFET datasheet
NVD5414N cross reference
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History: DMN2056U | IPT019N08N5 | AO4442 | HGA080N10A



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