NVD6495NL
MOSFET. Datasheet pdf. Equivalent
Type Designator: NVD6495NL
Marking Code: 6495NL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 91
nS
Cossⓘ -
Output Capacitance: 156
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
DPAK
NVD6495NL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVD6495NL
Datasheet (PDF)
..1. Size:67K onsemi
nvd6495nl.pdf 
NVD6495NLN-Channel Power MOSFET100 V, 25 A, 50 mW, LogicLevelFeatures Low RDS(on)http://onsemi.com 100% Avalanche Tested AEC-Q101 QualifiedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant54 mW @ 4.5 V100 V 25 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)50 mW @ 10 VParameter Symbol Value UnitDrain-to-Source Voltage V
9.1. Size:129K onsemi
ntd6416an nvd6416an.pdf
NTD6416AN, NVD6416ANMOSFET Power,N-Channel100 V, 17 A, 81 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 81 mW @ 10 V 17 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De
9.2. Size:129K onsemi
ntd6414an nvd6414an.pdf
NTD6414AN, NVD6414ANMOSFET Power,N-Channel100 V, 32 A, 37 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 37 mW @ 10 V 32 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De
9.3. Size:98K onsemi
nvd6416an.pdf
NTD6416AN, NVD6416ANN-Channel Power MOSFET100 V, 17 A, 81 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringID MAXUnique Site and Control Change Requirements; AEC-Q101 V(BR)DSS RDS(on) MAX (Note 1)Qualified and PPAP Capable100 V 81 mW @ 10 V 17 A These Devices a
9.4. Size:79K onsemi
ntd6416anl nvd6416anl.pdf
NTD6416ANL, NVD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101100 V 74 mW @ 10 V 19 AQualified and PPAP Capable These Devices are Pb-Free
9.5. Size:100K onsemi
nvd6415an.pdf
NTD6415AN, NVD6415ANN-Channel Power MOSFET100 V, 23 A, 55 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringID MAXV(BR)DSS RDS(on) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable100 V 55 mW @ 10 V 23 A These Devices
9.6. Size:98K onsemi
nvd6414an.pdf
NTD6414AN, NVD6414ANN-Channel Power MOSFET100 V, 32 A, 37 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringID MAXV(BR)DSS RDS(on) MAXUnique Site and Control Change Requirements; AEC-Q101 (Note 1)Qualified and PPAP Capable100 V 37 mW @ 10 V 32 A These Devices
9.7. Size:99K onsemi
nvd6416anl.pdf
NTD6416ANL, NVD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101100 V 74 mW @ 10 V 19 AQualified and PPAP Capable These Devices are Pb-F
9.8. Size:72K onsemi
ntd6415anl nvd6415anl.pdf
NTD6415ANL, NVD6415ANLN-Channel Power MOSFET100 V, 23 A, 56 mW, LogicLevelFeatures Low RDS(on)www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable56 mW @ 4.5 V100 V 23 A These Devices are Pb-Free and are RoHS
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