NVD6495NL datasheet, подбор замены

 ..1. Size:67K  onsemi
 nvd6495nl.pdf 

NVD6495NL N-Channel Power MOSFET 100 V, 25 A, 50 mW, Logic Level Features Low RDS(on) http //onsemi.com 100% Avalanche Tested AEC-Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 54 mW @ 4.5 V 100 V 25 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 50 mW @ 10 V Parameter Symbol Value Unit Drain-to-Source Voltage V

 9.1. Size:129K  onsemi
 ntd6416an nvd6416an.pdf 

NTD6416AN, NVD6416AN MOSFET Power, N-Channel 100 V, 17 A, 81 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring 100 V 81 mW @ 10 V 17 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These De

 9.2. Size:129K  onsemi
 ntd6414an nvd6414an.pdf 

NTD6414AN, NVD6414AN MOSFET Power, N-Channel 100 V, 32 A, 37 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring 100 V 37 mW @ 10 V 32 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These De

 9.3. Size:98K  onsemi
 nvd6416an.pdf 

NTD6416AN, NVD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring ID MAX Unique Site and Control Change Requirements; AEC-Q101 V(BR)DSS RDS(on) MAX (Note 1) Qualified and PPAP Capable 100 V 81 mW @ 10 V 17 A These Devices a

 9.4. Size:79K  onsemi
 ntd6416anl nvd6416anl.pdf 

NTD6416ANL, NVD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features Low RDS(on) www.onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 100 V 74 mW @ 10 V 19 A Qualified and PPAP Capable These Devices are Pb-Free

 9.5. Size:100K  onsemi
 nvd6415an.pdf 

NTD6415AN, NVD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring ID MAX V(BR)DSS RDS(on) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 100 V 55 mW @ 10 V 23 A These Devices

 9.6. Size:98K  onsemi
 nvd6414an.pdf 

NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring ID MAX V(BR)DSS RDS(on) MAX Unique Site and Control Change Requirements; AEC-Q101 (Note 1) Qualified and PPAP Capable 100 V 37 mW @ 10 V 32 A These Devices

 9.7. Size:99K  onsemi
 nvd6416anl.pdf 

NTD6416ANL, NVD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 100 V 74 mW @ 10 V 19 A Qualified and PPAP Capable These Devices are Pb-F

 9.8. Size:72K  onsemi
 ntd6415anl nvd6415anl.pdf 

NTD6415ANL, NVD6415ANL N-Channel Power MOSFET 100 V, 23 A, 56 mW, Logic Level Features Low RDS(on) www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 56 mW @ 4.5 V 100 V 23 A These Devices are Pb-Free and are RoHS