PHD12N10E Specs and Replacement

Type Designator: PHD12N10E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOT428

PHD12N10E substitution

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PHD12N10E datasheet

 ..1. Size:61K  philips
 phd12n10e 2.pdf pdf_icon

PHD12N10E

Philips Semiconductors Product Specification PowerMOS transistor PHD12N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mounting. The device is intended for ID Drain current (DC) 14 A use in Switched Mode Power Ptot Total power dissip... See More ⇒

 8.1. Size:114K  philips
 phb12nq15t phd12nq15t php12nq15t 1.pdf pdf_icon

PHD12N10E

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 12.5 A g RDS(ON) 200 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in... See More ⇒

Detailed specifications: PHB6ND50E, PHB7N60E, PHB80N06LT, PHB87N03LT, PHB8N50E, PHB8ND50E, PHB9N60E, PHD10N10E, IRF530, PHD2N50E, PHD2N60E, PHD3055E, PHD3N40E, PHD45N03LT, PHD50N03LT, PHD55N03LT, PHD69N03LT

Keywords - PHD12N10E MOSFET specs

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