PHD12N10E MOSFET. Datasheet pdf. Equivalent
Type Designator: PHD12N10E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT428
PHD12N10E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHD12N10E Datasheet (PDF)
phd12n10e 2.pdf
Philips Semiconductors Product Specification PowerMOS transistor PHD12N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmounting. The device is intended for ID Drain current (DC) 14 Ause in Switched Mode Power Ptot Total power dissip
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Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 12.5 AgRDS(ON) 200 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in
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