PHD12N10E Datasheet and Replacement
Type Designator: PHD12N10E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT428
PHD12N10E substitution
PHD12N10E Datasheet (PDF)
phd12n10e 2.pdf
Philips Semiconductors Product Specification PowerMOS transistor PHD12N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmounting. The device is intended for ID Drain current (DC) 14 Ause in Switched Mode Power Ptot Total power dissip
phb12nq15t phd12nq15t php12nq15t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 12.5 AgRDS(ON) 200 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in
Datasheet: PHB6ND50E , PHB7N60E , PHB80N06LT , PHB87N03LT , PHB8N50E , PHB8ND50E , PHB9N60E , PHD10N10E , AO4407 , PHD2N50E , PHD2N60E , PHD3055E , PHD3N40E , PHD45N03LT , PHD50N03LT , PHD55N03LT , PHD69N03LT .
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