PHD2N60E Datasheet and Replacement
Type Designator: PHD2N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT428
PHD2N60E substitution
PHD2N60E Datasheet (PDF)
php2n60e phb2n60e phd2n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 Ag Low thermal resistanceRDS(ON) 6 sGENERAL DESCRIPTIONN-chan
php2n50e phb2n50e phd2n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 Ag Low thermal resistanceRDS(ON) 5 sGENERAL DESCRIPTIONN-channe
Datasheet: PHB80N06LT , PHB87N03LT , PHB8N50E , PHB8ND50E , PHB9N60E , PHD10N10E , PHD12N10E , PHD2N50E , NCEP15T14 , PHD3055E , PHD3N40E , PHD45N03LT , PHD50N03LT , PHD55N03LT , PHD69N03LT , PHD6N10E , PHP10N10E .
History: STF6NM60N
Keywords - PHD2N60E MOSFET datasheet
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PHD2N60E replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STF6NM60N
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