All MOSFET. PHD2N60E Datasheet

 

PHD2N60E Datasheet and Replacement


   Type Designator: PHD2N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT428
 

 PHD2N60E substitution

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PHD2N60E Datasheet (PDF)

 ..1. Size:75K  philips
 php2n60e phb2n60e phd2n60e.pdf pdf_icon

PHD2N60E

Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 Ag Low thermal resistanceRDS(ON) 6 sGENERAL DESCRIPTIONN-chan

 9.1. Size:73K  philips
 php2n50e phb2n50e phd2n50e.pdf pdf_icon

PHD2N60E

Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 Ag Low thermal resistanceRDS(ON) 5 sGENERAL DESCRIPTIONN-channe

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History: AP14S50S-HF

Keywords - PHD2N60E MOSFET datasheet

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