PHD2N60E Specs and Replacement

Type Designator: PHD2N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: SOT428

PHD2N60E substitution

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PHD2N60E datasheet

 ..1. Size:75K  philips
 php2n60e phb2n60e phd2n60e.pdf pdf_icon

PHD2N60E

Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 A g Low thermal resistance RDS(ON) 6 s GENERAL DESCRIPTION N-chan... See More ⇒

 9.1. Size:73K  philips
 php2n50e phb2n50e phd2n50e.pdf pdf_icon

PHD2N60E

Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 A g Low thermal resistance RDS(ON) 5 s GENERAL DESCRIPTION N-channe... See More ⇒

Detailed specifications: PHB80N06LT, PHB87N03LT, PHB8N50E, PHB8ND50E, PHB9N60E, PHD10N10E, PHD12N10E, PHD2N50E, NCEP15T14, PHD3055E, PHD3N40E, PHD45N03LT, PHD50N03LT, PHD55N03LT, PHD69N03LT, PHD6N10E, PHP10N10E

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.