NVJS4151P Datasheet. Specs and Replacement
Type Designator: NVJS4151P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1.7 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
Package: SOT-363
NVJS4151P substitution
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NVJS4151P datasheet
nvjs4151p.pdf
NVJS4151P Trench Power MOSFET -20 V, -4.1 A, Single P-Channel, SC-88 Features Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm) for Maximum Circuit Board http //onsemi.com Utilization, Same as SC-70-6 Gate Diodes for ESD Protection V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable 55 mW @ -4.5 V These Devi... See More ⇒
ntjs4405n nvjs4405n.pdf
NTJS4405N, NVJS4405N MOSFET Single, N-Channel, Small Signal, SC-88 25 V, 1.2 A http //onsemi.com Features V(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on) 249 mW @ 4.5 V Higher Efficiency Extending Battery Life 25 V 1.2 A 299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co... See More ⇒
ntjs4405nt1 ntjs4405nt4 nvjs4405n.pdf
NTJS4405N, NVJS4405N Small Signal MOSFET 25 V, 1.2 A, Single, N-Channel, SC-88 Features Advance Planar Technology for Fast Switching, Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJS4405N 249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant 25 V 1.2 A 299 mW @ 2.7 ... See More ⇒
Detailed specifications: NVGS4111P, NVGS4141N, NVGS5120P, NVJD4152P, NVJD4158C, NVJD4401N, NVJD5121N, NVJS3151P, AON6414A, NVJS4405N, NVLJD4007NZ, NVLUS4C12N, NVMD3P03, NVMD4N03, NVMD6N03R2G, NVMD6N04, NVMFD5483NL
Keywords - NVJS4151P MOSFET specs
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