All MOSFET. NVLUS4C12N Datasheet

 

NVLUS4C12N Datasheet and Replacement


   Type Designator: NVLUS4C12N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 546 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: UDFN6
 

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NVLUS4C12N Datasheet (PDF)

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NVLUS4C12N

NVLUS4C12NPower MOSFET30 V, 10.7 A, Single N-Channel,2.0x2.0x0.55 mm mCoolt UDFN6 PackageFeatures Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving withwww.onsemi.comExposed Drain Pads for Excellent Thermal Conduction Ultra Low RDS(on) to Reduce Conduction LossesMOSFET Optimized Gate Charge to Reduce Switching LossesV(BR)DSS RDS(on) MAX ID MAX Low C

Datasheet: NVJD4152P , NVJD4158C , NVJD4401N , NVJD5121N , NVJS3151P , NVJS4151P , NVJS4405N , NVLJD4007NZ , IRFB4115 , NVMD3P03 , NVMD4N03 , NVMD6N03R2G , NVMD6N04 , NVMFD5483NL , NVMFD5485NL , NVMFD5489NL , NVMFD5852NL .

History: SWD051R08ES | 2SK788

Keywords - NVLUS4C12N MOSFET datasheet

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