NVLUS4C12N MOSFET. Datasheet pdf. Equivalent

   Type Designator: NVLUS4C12N
   Marking Code: AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 10.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.4 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 546 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: UDFN6

NVLUS4C12N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS