NVLUS4C12N Specs and Replacement
Type Designator: NVLUS4C12N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 546 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: UDFN6
NVLUS4C12N substitution
NVLUS4C12N datasheet
nvlus4c12n.pdf
NVLUS4C12N Power MOSFET 30 V, 10.7 A, Single N-Channel, 2.0x2.0x0.55 mm mCoolt UDFN6 Package Features Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with www.onsemi.com Exposed Drain Pads for Excellent Thermal Conduction Ultra Low RDS(on) to Reduce Conduction Losses MOSFET Optimized Gate Charge to Reduce Switching Losses V(BR)DSS RDS(on) MAX ID MAX Low C... See More ⇒
Detailed specifications: NVJD4152P , NVJD4158C , NVJD4401N , NVJD5121N , NVJS3151P , NVJS4151P , NVJS4405N , NVLJD4007NZ , P55NF06 , NVMD3P03 , NVMD4N03 , NVMD6N03R2G , NVMD6N04 , NVMFD5483NL , NVMFD5485NL , NVMFD5489NL , NVMFD5852NL .
Keywords - NVLUS4C12N MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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