NVLUS4C12N PDF and Equivalents Search

 

NVLUS4C12N Specs and Replacement


   Type Designator: NVLUS4C12N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 546 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: UDFN6
 

 NVLUS4C12N substitution

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NVLUS4C12N datasheet

 ..1. Size:79K  onsemi
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NVLUS4C12N

NVLUS4C12N Power MOSFET 30 V, 10.7 A, Single N-Channel, 2.0x2.0x0.55 mm mCoolt UDFN6 Package Features Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with www.onsemi.com Exposed Drain Pads for Excellent Thermal Conduction Ultra Low RDS(on) to Reduce Conduction Losses MOSFET Optimized Gate Charge to Reduce Switching Losses V(BR)DSS RDS(on) MAX ID MAX Low C... See More ⇒

Detailed specifications: NVJD4152P , NVJD4158C , NVJD4401N , NVJD5121N , NVJS3151P , NVJS4151P , NVJS4405N , NVLJD4007NZ , P55NF06 , NVMD3P03 , NVMD4N03 , NVMD6N03R2G , NVMD6N04 , NVMFD5483NL , NVMFD5485NL , NVMFD5489NL , NVMFD5852NL .

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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