All MOSFET. NVMD6N03R2G Datasheet

 

NVMD6N03R2G Datasheet and Replacement


   Type Designator: NVMD6N03R2G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOIC-8
 

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NVMD6N03R2G Datasheet (PDF)

 ..1. Size:332K  onsemi
 ntmd6n03r2g nvmd6n03r2g.pdf pdf_icon

NVMD6N03R2G

NTMD6N03R2,NVMD6N03R2Power MOSFET30 V, 6A, Dual N--Channel SOIC--8http://onsemi.comFeatures Designed for use in low voltage, high speed switching applicationsVDSS RDS(ON) Typ ID Max Ultra Low On--Resistance ProvidesHigher Efficiency and Extends Battery Life30 V 24 m @VGS =10V 6.0 A-- RDS(on) = 0.024 , VGS = 10 V (Typ)-- RDS(on) = 0.030 , VGS = 4.5 V (Typ)N-

 7.1. Size:95K  onsemi
 nvmd6n04.pdf pdf_icon

NVMD6N03R2G

NTMD6N04, NVMD6N04Power MOSFET40 V, 5.8 A, Dual N-Channel SOIC-8Features Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance ProvidesHigher Efficiency and Extends Battery Lifehttp://onsemi.com- RDS(on) = 0.027 W, VGS = 10 V (Typ)- RDS(on) = 0.034 W, VGS = 4.5 V (Typ)VDSS RDS(ON) Typ ID Max Miniature SOIC-8 Surface Mount Packa

Datasheet: NVJD5121N , NVJS3151P , NVJS4151P , NVJS4405N , NVLJD4007NZ , NVLUS4C12N , NVMD3P03 , NVMD4N03 , AON7408 , NVMD6N04 , NVMFD5483NL , NVMFD5485NL , NVMFD5489NL , NVMFD5852NL , NVMFD5853N , NVMFD5853NL , NVMFD5873NL .

History: RU190N10R | IRF820ASPBF

Keywords - NVMD6N03R2G MOSFET datasheet

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