NVMD6N03R2G Datasheet. Specs and Replacement

Type Designator: NVMD6N03R2G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SOIC-8

NVMD6N03R2G substitution

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NVMD6N03R2G datasheet

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 ntmd6n03r2g nvmd6n03r2g.pdf pdf_icon

NVMD6N03R2G

NTMD6N03R2, NVMD6N03R2 Power MOSFET 30 V, 6A, Dual N--Channel SOIC--8 http //onsemi.com Features Designed for use in low voltage, high speed switching applications VDSS RDS(ON) Typ ID Max Ultra Low On--Resistance Provides Higher Efficiency and Extends Battery Life 30 V 24 m @VGS =10V 6.0 A -- RDS(on) = 0.024 , VGS = 10 V (Typ) -- RDS(on) = 0.030 , VGS = 4.5 V (Typ) N-... See More ⇒

 7.1. Size:95K  onsemi
 nvmd6n04.pdf pdf_icon

NVMD6N03R2G

NTMD6N04, NVMD6N04 Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life http //onsemi.com - RDS(on) = 0.027 W, VGS = 10 V (Typ) - RDS(on) = 0.034 W, VGS = 4.5 V (Typ) VDSS RDS(ON) Typ ID Max Miniature SOIC-8 Surface Mount Packa... See More ⇒

Detailed specifications: NVJD5121N, NVJS3151P, NVJS4151P, NVJS4405N, NVLJD4007NZ, NVLUS4C12N, NVMD3P03, NVMD4N03, IRFP250N, NVMD6N04, NVMFD5483NL, NVMFD5485NL, NVMFD5489NL, NVMFD5852NL, NVMFD5853N, NVMFD5853NL, NVMFD5873NL

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