NVMFD5485NL Datasheet and Replacement
Type Designator: NVMFD5485NL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 26.6 nS
Cossⓘ - Output Capacitance: 126 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: DFN8
- MOSFET Cross-Reference Search
NVMFD5485NL Datasheet (PDF)
nvmfd5485nl.pdf

NVMFD5485NLPower MOSFET60 V, 44 mW, 20 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses 175C Operating TemperatureV(BR)DSS RDS(on) MAX ID MAX NVMFD5485NLWF - Wettable Flank Option for Enhanced Optical44 mW @ 10 VInspection60 V 20 A
nvmfd5483nlt1g.pdf

NVMFD5483NLMOSFET Power, DualN-Channel60 V, 36 mW, 24 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses36 mW @ 10 V 175C Operating Temperature60 V 24 A NVMFD5483NLWF - Wettable Flank Option for Enhanced Optical 45 mW @ 4
nvmfd5483nl.pdf

NVMFD5483NLPower MOSFET60 V, 36 mW, 24 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses 175C Operating TemperatureV(BR)DSS RDS(on) MAX ID MAX NVMFD5483NLWF - Wettable Flank Option for Enhanced Optical36 mW @ 10 VInspection60 V 24 A
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: LSF65R570GT | CSD16342Q5A
Keywords - NVMFD5485NL MOSFET datasheet
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History: LSF65R570GT | CSD16342Q5A



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