NVMFD5485NL Datasheet. Specs and Replacement

Type Designator: NVMFD5485NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.6 nS

Cossⓘ - Output Capacitance: 126 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: DFN8

NVMFD5485NL substitution

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NVMFD5485NL datasheet

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NVMFD5483NL MOSFET Power, Dual N-Channel 60 V, 36 mW, 24 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 36 mW @ 10 V 175 C Operating Temperature 60 V 24 A NVMFD5483NLWF - Wettable Flank Option for Enhanced Optical 45 mW @ 4... See More ⇒

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Detailed specifications: NVJS4405N, NVLJD4007NZ, NVLUS4C12N, NVMD3P03, NVMD4N03, NVMD6N03R2G, NVMD6N04, NVMFD5483NL, AON7408, NVMFD5489NL, NVMFD5852NL, NVMFD5853N, NVMFD5853NL, NVMFD5873NL, NVMFS4C01N, NVMFS4C03N, NVMFS4C05N

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