PHD3055E Datasheet and Replacement. Cross Reference Search

PHD3055E Datasheet (PDF)

..1. Size:105K philips
phd3055e php3055e 4.pdf pdf_icon

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 55 V Fast switchingID = 10.3 AgRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhancement mode, field-effect power transistor in a plastic envelope using tr

..2. Size:317K philips
php3055e phd3055e.pdf pdf_icon

PHP/PHD3055ETrenchMOS standard level FETRev. 06 25 March 2002 Product data1. DescriptionN-channel standard level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP3055E in SOT78 (TO-220AB)PHD3055E in SOT428 (D-PAK).2. Features Fast switching Low on-state resistance.3. Applications DC to DC converters Switc

..3. Size:75K philips
phb3055e phd3055e php3055e 3.pdf pdf_icon

Philips Semiconductors Preliminary specification TrenchMOS transistor PHP3055E, PHB3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 55 V Fast switching High thermal cycling performance ID = 10.5 A Low thermal resistancegRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhance

7.1. Size:54K philips
phd3055l 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor PHD3055L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmounting featuring high avalanche ID Drain current (DC) 12 Aenergy capability, stable

Datasheet: PHB87N03LT , PHB8N50E , PHB8ND50E , PHB9N60E , PHD10N10E , PHD12N10E , PHD2N50E , PHD2N60E , IRFP250 , PHD3N40E , PHD45N03LT , PHD50N03LT , PHD55N03LT , PHD69N03LT , PHD6N10E , PHP10N10E , PHP10N60E .