PHD3055E - параметры транзистора MOSFET, его аналоги, datasheet

PHD3055E Datasheet (PDF)

..1. Size:105K philips
phd3055e php3055e 4.pdf pdf_icon

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 55 V Fast switchingID = 10.3 AgRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhancement mode, field-effect power transistor in a plastic envelope using tr

..2. Size:317K philips
php3055e phd3055e.pdf pdf_icon

PHP/PHD3055ETrenchMOS standard level FETRev. 06 25 March 2002 Product data1. DescriptionN-channel standard level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP3055E in SOT78 (TO-220AB)PHD3055E in SOT428 (D-PAK).2. Features Fast switching Low on-state resistance.3. Applications DC to DC converters Switc

..3. Size:75K philips
phb3055e phd3055e php3055e 3.pdf pdf_icon

Philips Semiconductors Preliminary specification TrenchMOS transistor PHP3055E, PHB3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 55 V Fast switching High thermal cycling performance ID = 10.5 A Low thermal resistancegRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhance

7.1. Size:54K philips
phd3055l 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor PHD3055L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmounting featuring high avalanche ID Drain current (DC) 12 Aenergy capability, stable

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .