All MOSFET. NVMS5P02R2G Datasheet

 

NVMS5P02R2G Datasheet and Replacement


   Type Designator: NVMS5P02R2G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 7.05 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SOIC-8
 

 NVMS5P02R2G substitution

   - MOSFET ⓘ Cross-Reference Search

 

NVMS5P02R2G Datasheet (PDF)

 ..1. Size:114K  onsemi
 nvms5p02 nvms5p02r2g.pdf pdf_icon

NVMS5P02R2G

NTMS5P02, NVMS5P02Power MOSFET-5.4 Amps, -20 VoltsP-Channel Enhancement-ModeSingle SOIC-8 Packagehttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency-20 V26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS

 6.1. Size:134K  onsemi
 ntms5p02 nvms5p02.pdf pdf_icon

NVMS5P02R2G

NTMS5P02, NVMS5P02MOSFET Power, Single,P-Channel, EnhancementMode, SOIC-8-5.4 A, -20 Vhttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency-20 V26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifi

Datasheet: NVMFS5C410NL , NVMFS5C423NL , NVMFS5C442NL , NVMFS5C604NL , NVMFS5C612NL , NVMFS5C646NL , NVMFS5C670NL , NVMS5P02 , IRFZ24N , NVR1P02 , NVR4003N , NVR4501N , NVR5198NL , NVS4001N , NVS4409N , NVTA7002N , NVTFS4C05N .

History: PB521BX | AOUS66416 | PSMN9R0-25YLC | KTS3C3F30L | RJK03E7DPA | IRF644NS | 2P308B9

Keywords - NVMS5P02R2G MOSFET datasheet

 NVMS5P02R2G cross reference
 NVMS5P02R2G equivalent finder
 NVMS5P02R2G lookup
 NVMS5P02R2G substitution
 NVMS5P02R2G replacement

 

 
Back to Top

 


 
.