All MOSFET. NVMS5P02R2G Datasheet

 

NVMS5P02R2G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVMS5P02R2G
   Marking Code: E5P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
   |Id|ⓘ - Maximum Drain Current: 7.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SOIC-8

 NVMS5P02R2G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVMS5P02R2G Datasheet (PDF)

 ..1. Size:114K  onsemi
 nvms5p02 nvms5p02r2g.pdf

NVMS5P02R2G NVMS5P02R2G

NTMS5P02, NVMS5P02Power MOSFET-5.4 Amps, -20 VoltsP-Channel Enhancement-ModeSingle SOIC-8 Packagehttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency-20 V26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS

 6.1. Size:134K  onsemi
 ntms5p02 nvms5p02.pdf

NVMS5P02R2G NVMS5P02R2G

NTMS5P02, NVMS5P02MOSFET Power, Single,P-Channel, EnhancementMode, SOIC-8-5.4 A, -20 Vhttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency-20 V26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifi

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: BRCS035N06SDP | 2SK1707

 

 
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