PHD50N03LT Datasheet and Replacement
Type Designator: PHD50N03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: SOT428
PHD50N03LT substitution
PHD50N03LT Datasheet (PDF)
phb50n03lt phd50n03lt php50n03lt 7.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT Logic level FET PHD50N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 48 A High thermal cycling performance Low thermal resistance RDS(ON) 16 m (VGS = 10 V)g Logic leve
phd50n06lt.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 50 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal
phd50n06lt.pdf

Isc N-Channel MOSFET Transistor PHD50N06LTFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
Datasheet: PHB9N60E , PHD10N10E , PHD12N10E , PHD2N50E , PHD2N60E , PHD3055E , PHD3N40E , PHD45N03LT , IRFZ24N , PHD55N03LT , PHD69N03LT , PHD6N10E , PHP10N10E , PHP10N60E , PHP11N50E , PHP125N06LT , PHP12N10E .
History: RU75230S
Keywords - PHD50N03LT MOSFET datasheet
PHD50N03LT cross reference
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PHD50N03LT lookup
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PHD50N03LT replacement
History: RU75230S



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