PHD50N03LT Specs and Replacement
Type Designator: PHD50N03LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: SOT428
PHD50N03LT substitution
- MOSFET ⓘ Cross-Reference Search
PHD50N03LT datasheet
phb50n03lt phd50n03lt php50n03lt 7.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT Logic level FET PHD50N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 48 A High thermal cycling performance Low thermal resistance RDS(ON) 16 m (VGS = 10 V) g Logic leve... See More ⇒
phd50n06lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 50 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal... See More ⇒
phd50n06lt.pdf
Isc N-Channel MOSFET Transistor PHD50N06LT FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒
Detailed specifications: PHB9N60E, PHD10N10E, PHD12N10E, PHD2N50E, PHD2N60E, PHD3055E, PHD3N40E, PHD45N03LT, TK10A60D, PHD55N03LT, PHD69N03LT, PHD6N10E, PHP10N10E, PHP10N60E, PHP11N50E, PHP125N06LT, PHP12N10E
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