All MOSFET. NVS4409N Datasheet

 

NVS4409N Datasheet and Replacement


   Type Designator: NVS4409N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 22.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-323
 

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NVS4409N Datasheet (PDF)

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NVS4409N

NTS4409N, NVS4409NSmall Signal MOSFET25 V, 0.75 A, Single, N-Channel,ESD Protection, SC-70/SOT-323Featureshttp://onsemi.com Advance Planar Technology for Fast Switching, Low RDS(on) Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVS4409N249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant25

Datasheet: NVMFS5C670NL , NVMS5P02 , NVMS5P02R2G , NVR1P02 , NVR4003N , NVR4501N , NVR5198NL , NVS4001N , AO3401 , NVTA7002N , NVTFS4C05N , NVTFS4C06N , NVTFS4C08N , NVTFS4C10N , NVTFS4C13N , NVTFS4C25N , NVTFS5124PL .

History: SE100130GA | BSC019N04NSG | AP9564GM-HF | RUH1H139R | SWB090R08ET | 4N60KL-TMS2-T | IRLR7821CPBF

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