NVTJD4001N Datasheet. Specs and Replacement

Type Designator: NVTJD4001N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.272 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT-363

NVTJD4001N substitution

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NVTJD4001N datasheet

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NVTJD4001N

NTJD4001N, NVTJD4001N MOSFET Dual, N-Channel, Small Signal, SC-88 30 V, 250 mA Features www.onsemi.com Low Gate Charge for Fast Switching Small Footprint - 30% Smaller than TSOP-6 V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate AEC Q101 Qualified - NVTJD4001N 1.0 W @ 4.0 V 250 mA 30 V These Devices are Pb-Free and are RoHS Compliant 1.5 W @ 2.5 V Applicatio... See More ⇒

 ..2. Size:62K  onsemi
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NVTJD4001N

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Detailed specifications: NVTA7002N, NVTFS4C05N, NVTFS4C06N, NVTFS4C08N, NVTFS4C10N, NVTFS4C13N, NVTFS4C25N, NVTFS5124PL, IRF2807, NVTR01P02L, NVTR0202PL, NVTR4502P, NVTR4503N, NX1029X, NX2020N2, NX2020P1, NX3020NAK

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.