All MOSFET. NVTJD4001N Datasheet

 

NVTJD4001N Datasheet and Replacement


   Type Designator: NVTJD4001N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SOT-363
 

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NVTJD4001N Datasheet (PDF)

 ..1. Size:192K  onsemi
 ntjd4001n nvtjd4001n.pdf pdf_icon

NVTJD4001N

NTJD4001N, NVTJD4001NMOSFET Dual, N-Channel,Small Signal, SC-8830 V, 250 mAFeatureswww.onsemi.com Low Gate Charge for Fast Switching Small Footprint - 30% Smaller than TSOP-6V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate AEC Q101 Qualified - NVTJD4001N 1.0 W @ 4.0 V250 mA30 V These Devices are Pb-Free and are RoHS Compliant1.5 W @ 2.5 VApplicatio

 ..2. Size:62K  onsemi
 nvtjd4001n.pdf pdf_icon

NVTJD4001N

NTJD4001N, NVTJD4001NSmall Signal MOSFET30 V, 250 mA, Dual N-Channel, SC-88Features Low Gate Charge for Fast Switchingwww.onsemi.com Small Footprint - 30% Smaller than TSOP-6 ESD Protected GateV(BR)DSS RDS(on) TYP ID Max AEC Q101 Qualified - NVTJD4001N These Devices are Pb-Free and are RoHS Compliant1.0 W @ 4.0 V250 mA30 VApplications1.5 W @ 2.5 V

Datasheet: NVTA7002N , NVTFS4C05N , NVTFS4C06N , NVTFS4C08N , NVTFS4C10N , NVTFS4C13N , NVTFS4C25N , NVTFS5124PL , IRFB31N20D , NVTR01P02L , NVTR0202PL , NVTR4502P , NVTR4503N , NX1029X , NX2020N2 , NX2020P1 , NX3020NAK .

History: P0803BDG | 2SK888 | WMN30N80M3 | 2SJ605-Z | NCE70T680D | SFF240J | BUZ83

Keywords - NVTJD4001N MOSFET datasheet

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