NX2020N2 Datasheet and Replacement
Type Designator: NX2020N2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
Package: DFN2020MD-6
NX2020N2 Datasheet (PDF)
nx2020n2.pdf
NX2020N230 V, N-channel Trench MOSFET20 January 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra
nx2020p1.pdf
NX2020P130 V, single P-channel Trench MOSFET22 January 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic p
Datasheet: NVTFS4C25N , NVTFS5124PL , NVTJD4001N , NVTR01P02L , NVTR0202PL , NVTR4502P , NVTR4503N , NX1029X , IRF520 , NX2020P1 , NX3020NAK , NX7002AK , NX7002AKS , NX7002AKW , NX7002BK , NX7002BKM , NX7002BKMB .
History: AP3R604GMT-HF
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