NX2020N2 Datasheet and Replacement
Type Designator: NX2020N2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
Package: DFN2020MD-6
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NX2020N2 Datasheet (PDF)
nx2020n2.pdf
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History: 2SK1571 | IRF7473
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