NX7002BKXB
MOSFET. Datasheet pdf. Equivalent
Type Designator: NX7002BKXB
Marking Code: *000101
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.285
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 0.26
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1
nC
trⓘ - Rise Time: 4.3
nS
Cossⓘ -
Output Capacitance: 4.6
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8
Ohm
Package: DFN1010B-6
NX7002BKXB
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NX7002BKXB
Datasheet (PDF)
..1. Size:257K nxp
nx7002bkxb.pdf 
NX7002BKXB60 V, dual N-channel Trench MOSFET30 June 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Leadless ultra small and ultra thin SMD plast
6.1. Size:234K nxp
nx7002bkmb.pdf
NX7002BKMB60 V, N-channel Trench MOSFET3 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology
6.2. Size:263K nxp
nx7002bkw.pdf
NX7002BKW60 V, single N-channel Trench MOSFET20 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroSt
6.3. Size:235K nxp
nx7002bkm.pdf
NX7002BKM60 V, N-channel Trench MOSFET3 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology
6.4. Size:294K nxp
nx7002bks.pdf
NX7002BKS60 V, dual N-channel Trench MOSFET12 May 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroS
6.5. Size:266K nxp
nx7002bk.pdf
NX7002BK60 V, N-channel Trench MOSFET12 May 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharg
6.6. Size:269K nxp
nx7002bkh.pdf
NX7002BKH60 V, N-channel Trench MOSFET12 March 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology El
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